TRANSISTOR KD 366 Search Results

PH1516-2

Abstract: LT 1146 d 1047 transistor Cbc 183 cl PH1516
Contextual Info: /M Îh C m a n A M P com pany Wireless Bipolar Power Transistor, 2W 1.45 -1.60 GHz PH1516-2 Features • • • • • • D e s ig n e d f o r C e llu la r B ase S ta tio n A p p lic a tio n s C lass AB: -33 d B c T yp 3 rd IM I a t 2 W atts PEP C lass A; +4-4 d B m I'yp 3 rd O r d e r I n te r c e p t P o in t

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP

rb 60A sk

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 60W 850 - 900 MHz PH0810-60A Features • • • • • D esigned for l.inear A m plifier A pplications Class AB: -30 dBc Typ 3rd 1MD at 60 W atts PEP C o m m o n E m itter C on fig u ratio n In tern a l In p u t a n d O u tp u t Im p ed a n ce M atching

Contextual Info: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 R L L EN D EC built-in VFO IC developed for magnetic disks. This device decodes a 2-7 R L L signal read from a magnetic disk into an N R Z signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7

transistor c s z 44 v

Abstract: 6010.5
Contextual Info: A rfK C M m an A M P com pany Radar Pulsed Power Transistor, 25W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S Features • • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n

C 4458

Abstract: CC 1215
Contextual Info: AfeXm Coming Attractions m a n A M P com pany Avionics Pulsed Power Transistor, 100W, TDMA Format 960 -1215 MHz PH0912-100 V1.00 Features • • • • • • • • • Designed for JT ID S Application NPN Silicon Microwave Power Transistor Com m on Emiter Configuration

Contextual Info: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n

Contextual Info: Afaœm m an A M P com pany C\N Power Transistor, 3.5W 2.3 GHz PH2323-3 Features • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • C la s s C O p e r a tio n • ln te r d ig ita te d G e o m e tr y

Contextual Info: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n

t4877

Contextual Info: M m anfaA M PCcomim pany Radar Pulsed Power Transistor, 20W, 100 is Pulse, 10% Duty 2.9-3.1 GHz PH2931-20M Features • • • • • • • • NFN Silicon M icrowave Pow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ratio n

Contextual Info: an A M P company Radar Pulsed Power Transistor, 135W, 20jis Pulse, 1% Duty 2.9 - 3.1 GHz PH2931 -135S • • • • • • • • V2.00 suo üfe Features NPN Silicon P ow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ra tio n

Contextual Info: a n A M P com pany Radar Pulsed Power Transistor, 65W, 100 xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-65M 9 DO VS? 86 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n

Contextual Info: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features • • • • • • • • N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry

Contextual Info: A Æ c û M W an A M P com pany Radar Pulsed Power Transistor, 55W, 300ns Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features • N I ’ N S ilic o n M icro w a v e P o w e r T ra n sisto r • C o m m o n B a s e C o n fig u ra tio n • B r o a d b a n d Mass C O p e r a tio n

transistor 12W

Contextual Info: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 -1 .4 GHz PH1214-12M V2.00 Features • • • • • • • • b/a NFN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n

transistor c s z 44 v

Contextual Info: an A M P com pany Radar Pulsed Power Transistor, 25W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-25M Features • • • • • • • • NI'N Silicon M icrow ave Pow er T ran sisto r C om m on Base C onfiguration B ro a d b an d Class C O p e ra tio n High Efficiency In terd ig ita te d G eo m etry

Contextual Info: Ajfem *À m an A M P com pany Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-20EL Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n

transistor c s z 44 v

Contextual Info: A ùj ^ yj f w a n A M P com pany Radar Pulsed Power Transistor, 25W, 300^is Pulse, 10% Duty 1.2-1.4 GHz PH1214-25L Features • • • • • • • • NPN Silicon M icrow ave Pow er T ransistor C o m m o n Base C on figuration B roadb an d C lass C O p eratio n

Contextual Info: /M ÌK m an A M P com pany Radar Pulsed Power Transistor, 220W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-220M V2.00 Features NHN Silicon M icrow ave P o w er T ran sistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O peratio n H igh Hfficiency In terd igitated G eo m etry

Contextual Info: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices

equivalent transistor c 243

Abstract: lf2805a 1000 MHz transistor 5W
Contextual Info: A fikQ m w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 500 -1000 MHz LF2805A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

capacitor 330 j38

Abstract: Rogers 6010.5
Contextual Info: an A M P company Wireless Bipolar Power Transistor, 60W 1450- 1550 MHz PH1516-60 V2.00 _ 16.51 ’630 Features • • • • • • _ .4 0 0 _ (10.16) D esigned for l.inear Am plifier A pplications Class AB: -30 dBc Typ 3rd IMD at 60 W atts PKP Class A: + 5 3 dBm Typ 3rd O rd e r In te rc e p t Point

0 9 0 M

Contextual Info: a n A M P com pany Avionics Pulsed Power Transistor, 175W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-175L Features • N PN S ilic o n M ic ro w a v e P o w e r T ran sisto r uu 10 ^ • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la ss C O p e r a tio n