TRANSISTOR K6A60D Search Results
TRANSISTOR K6A60D Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR K6A60D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K6A60DContextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) |
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TK6A60D K6A60D | |
K6A60D
Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
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TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2 | |
K6A60D
Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A
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TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A | |
k6a60dContextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) |
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TK6A60D k6a60d |