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Toshiba America Electronic Components TK6A60W,S4VX MOSFET N-CH 600V 6.2A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A60W,S4VX	Tube			1	1 $2.63 10 $1.69 100 $1.16 1000 $0.93 10000 $0.93	Buy Now
Mouser Electronics	TK6A60W,S4VX		128			1 $2.71 10 $1.55 100 $1.18 1000 $0.87 10000 $0.81	Buy Now
Toshiba America Electronic Components TK6A60D(STA4,Q,M) MOSFET N-CH 600V 6A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A60D(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	TK6A60D(STA4,Q,M)		9,377			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK6A60W,S4VX(M MOSFET, N-CH, 600V, 6.2A, TO-220SIS;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TK6A60W,S4VX(M	Bulk	1,313		1	1 $1.73 10 $1.47 100 $1.13 1000 $0.87 10000 $0.69	Buy Now
EBV Elektronik	TK6A60W,S4VX(M		350	23 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies VS-6EWL06FN-M3 Rectifiers 6A 600V 59ns Ultrafast
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	VS-6EWL06FN-M3	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $0.48	Buy Now
Vishay Intertechnologies VS-6EWX06FN-M3 Rectifiers 6A 600V 14ns Hyperfast
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	VS-6EWX06FN-M3	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $0.49	Buy Now

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K6A60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K6A60D Abstract: K6A60 TK6A60D Contextual Info: K6A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 3.0 S (標準)	Original	TK6A60D K6A60D K6A60 TK6A60D	PDF
k6a60d Contextual Info: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK6A60D k6a60d	PDF
K6A60D Contextual Info: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.)	Original	TK6A60D K6A60D	PDF
k6a60d Abstract: TK6A60D K6A60 Contextual Info: K6A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 3.0 S (標準)	Original	TK6A60D SC-67 2-10U1B 20070701-JA k6a60d TK6A60D K6A60	PDF
K6A60D Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2 Contextual Info: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.)	Original	TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2	PDF
K6A60D Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A Contextual Info: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.)	Original	TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A	PDF