TRANSISTOR K405 Search Results
TRANSISTOR K405 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR K405 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low |
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k4059k4059l-x-aq3-rk4059g-x-aq3-rot-723+1 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low |
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k4059k4059g-x-aq3-rot-723qw-r228-001 | |
transistor k702
Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
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cpd0603076c0cf-18cf-18jhuzbzzk1mn04b00073+15 | |
ic lm258n
Abstract: LM358 equivalent K408 LM358N equivalent 104 aec capacitor K408 so-8 K405 lm358 so-8 opamp lm358 so-8 symbol opamp Lm358 pin function
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lm158-lm258-lm358lm358nlm358anlm358d+14 | |
LM358 equivalent
Abstract: TRANSISTOR k405 K408 MARKING LM358AN LM358N equivalent opamp Lm358 pin function k408 LM258N equivalent ic lm358n LM258ST
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lm158-lm258-lm358lm358nlm358anlm358d+13 | |
NEC Tokin oe 907
Abstract: inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 CPD0307024C1 DFHM9007ZA motorola transistor R711 toshiba l850
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cpd0307024c1cf-18cf-18bhkzxdmblm21p600sg+12 | |
K2134
Abstract: transistor k314 3225 K30 Transistor k221 NEC K2134 K43E ricoh fb5 front panel cn30 transistor bipolar k72 K294 K1MMZZB00002
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cpd0309020c1cf-29cf-29ctkgz1men60825+10 | |
ic lm358n
Abstract: lm358 IC DATASHEET ic lm258n LM158A-LM258A-LM358A k408 LM358ADT lm358n operational amplifier as summing amplifier CI LM358D peak lm358 LM358N pin DIAGRAM
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lm158-lm258-lm358lm158a-lm258a-lm358a100dbic lm358n+8 | |
K405
Abstract: LM258N equivalent LM358ADT K-405
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lm158-lm258-lm358lm158a-lm258a-lm358ak405lm258n equivalent+2 | |
st 358a
Abstract: LM358ADT K408 st lm258 LM158 lm358 IC DATASHEET lm358 sum q001 DATASHEET IC LM358 K405
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lm158-lm258-lm358st 358alm358adtk408+7 | |
pin diagram of LM358
Abstract: lm258 lm358 pin diagram LM258YD
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lm158lm258lm358docid2163+3 | |
K416
Abstract: LM358N pin DIAGRAM LM358 comparator lm358 sum LM358ADT K405 DIP8 Package k ST lm358 lm358 IC DATASHEET JESD97
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lm158-lm258-lm358k416lm358n pin diagramlm358 comparator+7 | |
lm3580
Abstract: lm358 sum LM358ADT 358a tssop ic lm358n LM358N JESD97 LM158 LM158A LM358
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lm158-lm258-lm358lm3580lm358 sumlm358adt+7 | |
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Contextual Info: LM158, LM258, LM358 Low-power dual operational amplifiers Datasheet - production data Features • Internally frequency-compensated • Large DC voltage gain: 100 dB • Wide bandwidth unity gain : 1.1 MHz (temperature compensated) DIP8 (Plastic package) |
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lm158lm258lm358docid2163 | |
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Contextual Info: LM158, LM258, LM358 Low-power dual operational amplifiers Datasheet − production data Features • Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator |
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lm158lm258lm358 | |
st 358a
Abstract: LM3585 LM358N ST LM158 lm358 frequency duty cycle ST LM358n MARKING k4C st lm258 ST LM358 ST MARKING CODE LM358
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lm158lm258lm358st 358a+8 | |
220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
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p390-ndp465-ndp466-ndp467-nd+14 | |
MH1SS1
Abstract: MH74141 MH7490A MAA725 MH7493A MZK105 MH74188 MH84 MA3006 MZH115
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mh1ss1mh74141mh7490amaa725+6 | |
MH1SS1
Abstract: MH3SS2 MAF100 MH84 MHB4011 MZK105 MA3005 MH74141 MAA723 MH74188
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OCR Scan |
mh3000mhb8080a3304smh1ss1+9 | |