Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K3797 Search Results

    TRANSISTOR K3797 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR K3797 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3797

    Abstract: K3797 Transistor
    Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 k3797 K3797 Transistor PDF

    k3797

    Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
    Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B PDF

    K3797

    Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
    Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 K3797 K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q) PDF

    K3797 Transistor

    Abstract: K3797 2SK3797 54V4 transistor k3797 K379
    Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 K3797 Transistor K3797 2SK3797 54V4 transistor k3797 K379 PDF

    k3797

    Abstract: K3797 Transistor K379 2SK3797
    Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3797 k3797 K3797 Transistor K379 2SK3797 PDF