TRANSISTOR K3767 Search Results

TRANSISTOR K3767 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR K3767 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3767 Abstract: transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6 S (typ.)	Original	2SK3767 k3767 transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent	PDF
k3767 Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6 S (typ.)	Original	2SK3767 k3767	PDF
Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: \|Yfs\| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767	PDF
transistor k3767 Abstract: K3767 2sk3767 equivalent k3767 2SK3767 equivalent Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767 transistor k3767 K3767 2sk3767 equivalent k3767 2SK3767 equivalent	PDF
transistor k3767 Abstract: K3767 2SK3767 Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767 transistor k3767 K3767 2SK3767	PDF
transistor k3767 Abstract: K3767 2sk3767 Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767 transistor k3767 K3767 2sk3767	PDF