TRANSISTOR K3767 Search Results

TRANSISTOR K3767 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B		Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR K3767 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3767 Abstract: transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6 S (typ.)	Original	2SK3767 k3767 transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent	PDF
k3767 Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6 S (typ.)	Original	2SK3767 k3767	PDF
Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: \|Yfs\| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767	PDF
transistor k3767 Abstract: K3767 2sk3767 equivalent k3767 2SK3767 equivalent Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767 transistor k3767 K3767 2sk3767 equivalent k3767 2SK3767 equivalent	PDF
transistor k3767 Abstract: K3767 2SK3767 Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767 transistor k3767 K3767 2SK3767	PDF
transistor k3767 Abstract: K3767 2sk3767 Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3767 transistor k3767 K3767 2sk3767	PDF