TRANSISTOR K366 Search Results

K3667

Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

K3667

Abstract: toshiba k3667 2SK3667 transistor compatible k3667
Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

K3662

Abstract: K366 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 55 S (typ.)

Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

K3662

Abstract: K366 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

K3669

Abstract: 2SK3669 MJ1005
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6 S (typ.)

K3669

Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

K3669

Abstract: K366 2SK3669
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

K3669

Abstract: 2SK3669 MJ1005
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

K3662

Abstract: 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

K3662

Abstract: 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

K3662

Abstract: K366 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

toshiba k3667

Abstract: K3667 ALL k3667 K366 2SK3667
Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

K3667

Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

2SK3669

Abstract: K3669 MJ1005
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)

K366

Abstract: K3669 2SK3669
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122