TRANSISTOR K3565 Search Results

TRANSISTOR K3565 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B		Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR K3565 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor K3565 Abstract: K3565 transistor K3565 compatible transistor Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	2SK3565 transistor K3565 K3565 transistor K3565 compatible transistor	PDF
transistor K3565 Abstract: k3565 k3565 transistor K3565 data 2SK3565 K3565 compatible transistor K356 Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	2SK3565 transistor K3565 k3565 k3565 transistor K3565 data 2SK3565 K3565 compatible transistor K356	PDF
Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3565	PDF
transistor K3565 Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3565 transistor K3565 K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC	PDF
K3565 transistor Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565 Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3565 K3565 transistor transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565	PDF
transistor K3565 Abstract: K3565 transistor K3565 data k3565 2sk3565 Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3565 transistor K3565 K3565 transistor K3565 data k3565 2sk3565	PDF