TRANSISTOR K2608 Search Results

TRANSISTOR K2608 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR K2608 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K2608 Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) (typ.) Low leakage current	Original	2SK2608 K2608	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
transistor k2608 Abstract: K2608 toshiba transistor k2608 2sk2608 Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) Low leakage current	Original	2SK2608 transistor k2608 K2608 toshiba transistor k2608 2sk2608	PDF
K2608 Abstract: transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608 Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) z Low leakage current	Original	2SK2608 K2608 transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608	PDF
transistor k2608 Abstract: K2608 2sk2608 Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) z Low leakage current	Original	2SK2608 transistor k2608 K2608 2sk2608	PDF
transistor k2608 Abstract: K2608 2-10P1B 2SK2608 Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) z Low leakage current	Original	2SK2608 transistor k2608 K2608 2-10P1B 2SK2608	PDF