TRANSISTOR K2 Search Results

97CC

Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

CMBT5400

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

k2415

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K2415 is N-Channel MOS Field Effect Transistor designed in m illim eters for high voltage switching applications.

2SC5603

Abstract: 2SC5676
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor

ic 901

Abstract: 2SC5603 2SC5676 uPA846TC-T1
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor

2SC5435

Abstract: 2SC5600 IC 14558 5mA25
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor

transistor smd marking k2

Abstract: transistor marking SA p sot-23 smd transistor k2 CMBT5400 transistor smd K2 MARKING SMD pnp TRANSISTOR ec
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS

2SC5602

Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA

2SC5435

Abstract: 2SC5437 NEC 2505 nj
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor

Contextual Info: CMBT5400 HIGH VOLTAGE TRANSISTOR P -N -P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 1.4 2.6 2.4 R0.1 c m _1.02 - 0.12 1 0.02 0.89"

transistor NEC 7812

Abstract: 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA848TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5668, 2SC5676) Q1: 21.0 GHz fT high-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application

k72 transistor

Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Contextual Info: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.

2SC5603

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

2SC5600

Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

nec a1640

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

2SC5600

Abstract: marking 603 npn transistor NEC 1093
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

BFX60

Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier

2SC5600

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA871TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

2SC5603

Abstract: marking TW
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted

NEC 9712

Abstract: 2SC5676
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA872TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz

5E25

Abstract: 2SC5600
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

nec a1141

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz