TRANSISTOR K 314 Search Results

VTO-8090

Contextual Info: Wtiili HEWLETT mL'HM PA C K A R D Avantek Products Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features Description Pin Configuration • 300 MHz to 10.5 GHz Coverage IIP VTG-8000 Scries oscillators use a silicon transistor chip as a negative

Contextual Info: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

2SK315

Contextual Info: Ordering number : EN1005B _ 2 S K 5 1 5 -Channel Junction Silicon Field-Effect Transistor FM T u n e r A p p l i c a t i o n s Features * Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact,

PSMN2R5-30YL

Contextual Info: LF PA K PSMN2R5-30YL N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: 1 7c1gcia37 0045Û14 Sbfl •SGTH _ *57 S C S -T H O M S O N IL C K g ra *! S T E 4 5 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE S TE45N 50 V dss 500 V RDS on Id < 0.11 n 45 A ■ HIGH CURRENT POWER MODULE

T3HS

Contextual Info: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .

transistor BC 306A

Contextual Info: CMOS LSI No. 5485 LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary 3149-DIP48S 0.25 [LC665304A/665306A/665308A/665312A/665316A] 25 1 24 0.48 1.05 2.53 1.78 5.1max 3.8

lpg leakage detector

Abstract: LB1920 motor speed drive lpg leakage detector circuit diagram
Contextual Info: Ordering number : EN4949B Monolithic Digital 1C LB1920 N0.4949B Three-Phase Brushless Motor Driver for Office Automation Applications Applications Package Dimensions • Paper feed and drum motor drivers in FAX and PPC units unit: mm 3147A-DIP28HS Functions and Features

LB1824

Abstract: N1595 LB1822 LB1920 motor speed drive en49
Contextual Info: Ordering number : EN4949B Monolithic Digital IC LB1920 Three-Phase Brushless Motor Driver for Office Automation Applications Applications Package Dimensions • Paper feed and drum motor drivers in FAX and PPC units unit: mm 3147A-DIP28HS Functions and Features

lt 5217

Contextual Info: Ordering number : EN*6183 Monolithic Digital IC LB 11847 js A ß fo j PWM Current Control Type Stepping Motor Driver Preliminary Package Dimensions Overview unit: mm The LB 11847 is a driver IC for stepping motors 3147B-DIP28H [LB11847] with PWM current control bipolar drive fixed OFF

2SC4602A

Contextual Info: j Ordering number: EN 3148 _2SC4602 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . Surface mount type device making the following possible -Reduction in the num ber of m anufacturing processes for 2SC4602-applied equipment

Contextual Info: Ordering num ber: EN 3143 2SC4597 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu res • Surface mount type device m aking the following possible -Reduction in the number of manufacturing processes for 2SC4597-applied equipment

Contextual Info: Ordering num ber: EN 3 1 4 6 2SC4600 No.3146 SA \YO I NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SC4600-applied equipment

BF314

Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität

TRANSISTOR K 314

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA)

MRC106

Abstract: LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057
Contextual Info: Philips Semiconductors • 711D6gb 0 D b 3 m b ' PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain T7b M P H I N Product specification bSE D BLV945A QUICK REFERENCE DATA RF performance at Th = 25 °C In a common emitter class-AB push-pull test

ITS 31422

Abstract: 2044B 2SC4523
Contextual Info: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

Contextual Info: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 314, SFH 314 FA SFH 314 SFH 314 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 460 nm.1080 nm SFH 314 , 740 nm. 1080 nm (SFH 314 FA) • Package: 5mm Radial (T 1 ¾), Epoxy

Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

potentiostat

Abstract: 1.8v dfn 099 Nippon capacitors
Contextual Info: 19-3142; Rev 0; 1/04 Low IBIAS, +1.4V/800nA, Rail-to-Rail Op Amps with +1.2V Buffered Reference The single MAX4036/MAX4037 and dual MAX4038/ MAX4039 operational amplifiers operate from a single +1.4V to +3.6V without reference or +1.8V to +3.6V (with reference) supply and consume only 800nA of supply

2SA1314

Contextual Info: 2SA1314 TOSHIBA 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO PO W ER APPLICATIONS • High DC Current Gain and Excellent Linearity : h F E (1) = 140-600 (V CE = - IV, Ie = -0.5A) : hjpE (2) = 60 (Min.), 120 (Typ.), (VCE= -1 V , IC= -4 A )

high voltage pnp transistor 700v

Abstract: 743V pnp transistor 800v
Contextual Info: Section 3.4 POWER MANAGEMENT 1C • Description The S-8470AFS is a CMOS power management 1C for portable telephones. It contains a watch­ dog timer circuit, in addition to four series-type voltage regulators and four voltage detectors. Features • Four built-in high-precision voltage regulators with

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,