TRANSISTOR K 135 MOSFET Search Results

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

2507

Contextual Info: M IC 2507 MIC2507 Quad Integrated High-Side Switch Preliminary Information General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input

Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

1147 x motorola

Abstract: "RF power MOSFETs" AN211A AN215A AN721 MRF1511T1 J302 fet MRF151
Contextual Info: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

MRF1511

Contextual Info: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

1147 x motorola

Abstract: AN215A AN721 MRF1511T1 AN211A
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial

Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

MRF1513 equivalent

Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

MRF1518

Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

C2505

Contextual Info: M IC 2505/2506 M iere! General Description Features The MIC2505 and MIC2506 are single and dual integrated high-side power switches that consist of TTL compatible inputs, a charge pump, and protected N-channel MOSFETs. The MIC2505/6 can be used instead of separate high-side

AN211A

Abstract: AN721 AN4005 FM LDMOS freescale transistor FREESCALE PACKING A113 AN215A JESD22 MRF1511N MRF1511NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

AN721

Abstract: AN4005 A113 AN211A AN215A EB212 MRF1511N MRF1511NT1 arco 466
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 7, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

25 ohm semirigid

Contextual Info: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er

Y4 series surface mount transistor

Abstract: 100L AN569 MMDF3C03HD MMDF3C03HDR2 carrier recovery
Contextual Info: MOTOROLA s SEMICONDUCTOR TECHNICAL Advance Order this document by MMDF3C03HD/D DATA Information MMDF3C03HD Medium Power Surface Mount Products I Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETS which utilize Motorola’s High Cell Density HDTMOS process.

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

K 2642 transistor

Abstract: TRIMMER capacitor 10-40 pf b 595 transistor Transistor Equivalent list resistor 300 ohms DU2860U
Contextual Info: A jte X M M an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 -1 7 5 MHz DU2860U V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

Contextual Info: MOTOROLA Order this document by MMDF2P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2P01 HD Medium Power Surface Mount Products M otorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: SMDType DIP Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KHP45N03 LT TO220 Features Low on-state resistance Fast switching. 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage

d2p01

Abstract: AN569 MMDF2P01HD MMDF2P01HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF2P01HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2P01HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs