TRANSISTOR K 135 MOSFET Search Results

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

2507

Contextual Info: M IC 2507 MIC2507 Quad Integrated High-Side Switch Preliminary Information General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input

Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

1147 x motorola

Abstract: "RF power MOSFETs" AN211A AN215A AN721 MRF1511T1 J302 fet MRF151
Contextual Info: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

J-031

Abstract: AN211A AN215A AN721 MRF1511T1
Contextual Info: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

0.5 W silicon zener diode

Abstract: TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF1518T1 MRF-151
Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

MRF1511

Contextual Info: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

1147 x motorola

Abstract: AN215A AN721 MRF1511T1 AN211A
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial

AN721

Abstract: "RF power MOSFETs" A113 AN211A AN215A MRF1511 MRF1511NT1 MRF1511T1
Contextual Info: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

MRF1513 equivalent

Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

MRF1513

Abstract: AN211A AN215A AN721 MRF1513T1 2001R
Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

MRF1518

Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

C1324

Abstract: flange RF termination 50 Freescale S12 Z9.1 A113 AN211A AN215A AN721 MRF1511N MRF1511NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 5, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

305 Power Mosfet MOTOROLA

Abstract: j327 transistor MRF1518 AN211A AN215A AN721 MRF1518T1
Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

C2505

Contextual Info: M IC 2505/2506 M iere! General Description Features The MIC2505 and MIC2506 are single and dual integrated high-side power switches that consist of TTL compatible inputs, a charge pump, and protected N-channel MOSFETs. The MIC2505/6 can be used instead of separate high-side

AN211A

Abstract: AN721 AN4005 FM LDMOS freescale transistor FREESCALE PACKING A113 AN215A JESD22 MRF1511N MRF1511NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

AN721

Abstract: AN4005 A113 AN211A AN215A EB212 MRF1511N MRF1511NT1 arco 466
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 7, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

A113

Abstract: AN211A AN215A AN721 MRF1511N MRF1511NT1 arco TRIMMER capacitor AN400
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 6, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

25 ohm semirigid

Contextual Info: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er