TRANSISTOR JP Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

LIMITING INRUSH CURRENT npn

Contextual Info: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

world transistor

Abstract: JAPAN transistor World transistors
Contextual Info: Renesas Technology Improves Transistor Performance with New Low-cost Fabrication Technology for 45-nanometer Process Generation and Beyond Redesigned p-type transistor with two-layer metal gate and n-type transistor with polysilicon gate achieve world top-level drive performance

LIMITING INRUSH CURRENT npn

Abstract: LP395 LP395Z LM195 Z03A NPN center base transistors
Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

LIMITING INRUSH CURRENT npn

Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

D8050

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

LM195

Abstract: LP395 LP395Z Z03A transistor lp395z
Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

BLW77

Abstract: neutralization push-pull philips Trimmer 60 pf
Contextual Info: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Contextual Info: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm φ0.8 1.5±0.2 (1.05) 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

NTM2222a

Abstract: NTM2907A
Contextual Info: SILICON TRANSISTOR NTM2222A GENERAL PURPOSE AMPLIFIER, HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The NTM2222A is designed fo r general purpose amplifier and high speed switching applications, especially Hybrid Integrated Circuit.

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION PHX5N40E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high

buk657-500

Abstract: BUK657-500B T0220AB transistor D 588
Contextual Info: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK555-60H

Abstract: T0220AB
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched

pj 72 diode

Abstract: pj 67 diode W1872 diode pj 72
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP18N20E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

buk438

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

Contextual Info: Composite Transistors UN604 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm φ0.8 1.5±0.2 (1.05) 5 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

TRANSISTOR C 4460

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor
Contextual Info: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature