TRANSISTOR JC 515 Search Results

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Abstract: VCEO100
Contextual Info: X O O 3 J » SPT 5150 50 AMP PNP Solid S u t * Device! Incorporated 14830 Valley V iew Avenue La Mirada, California 90638 Telephone (2131 921-9660 T W X -910-583-4807 FEA TU RES POWER SWITCHING TRANSISTOR * I C .50 Amps * Fa st Switching 500 ns max.

GT8G101

Abstract: 2BLC 27F2C 2-21F2C GT60M302
Contextual Info: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode

Contextual Info: TO SHIBA 2SK1310 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 310 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power P o ^l90W Min. Drain Efficiency 7D = 65%(Typ.) Frequency f = 230MHz Unit in mm -H _ e Push - Pull Structure Package

NJL5154

Abstract: RW 4060
Contextual Info: NJL5154D/54M HIGH VCE MINI PHOTO COUPLER • GENERAL DESCRIPTION OUTLINE typ. U nit: mm The N JL 5154D /M are small package dual-in-line photo couplers which consist o f high power infrared emitting diode and high sensitve, high collector emitter voltage Si photo transistor.

2N4301

Contextual Info: TYPE 2N4301 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 50 W at 100°C Case Temperature • Max V£E Sat of 0.4 V at 5 A lc i l • tyP *on °f ISO ns at 5 A l( • Min fT of 40 MHz * m echanical d ata

78H15

Abstract: uA78H12 A78H12 78h12 MA78H A78H15 Ma78h15
Contextual Info: /¿ A 7 8 H 1 2 • ¿ /A 7 8 H 1 5 5 AMP VOLTAGE REGULATORS FAIRCHILD HYBRID PRODUCTS GENERAL DESCRIPTION Fixed O u tp ut - The /¿A78H12 and ^A78H15 are regulators with fixed output volt­ ages and 5 A output current capability with all the inherent characteristics of the

Contextual Info: S D S S D S ARF1500 ARF1500 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 1525-xx S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

em 518 diode

Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I

NDB6051L

Abstract: NDP6051L 30D40 MJ48A
Contextual Info: N November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field

Contextual Info: fCWEREX POÙIEREX INC B 'ìE D • 7 2 m t2 1 GDGM37fi 2 » P R X r KED245A1HB Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue Durand, BP107, 72003 Le Mans, France (43) 41.14.14 G, H Î Q h mB G t 3

tms 2300

Abstract: HIC037 transistor bf 175
Contextual Info: TMS4020NC • Mechanical data and pin alignments Add the following data: The TM S 40 20 NC is also available in a 22 pin dual-in line package w ith 400-m il spacing between leads. The pin assignments are as shown. FUNCTION PIN NO. FUNCTIC 1 2 3 4 5 6 Ag Ag

NDP6051L

Abstract: NDB6051L S1490 30d40
Contextual Info: November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field

9275 transistor

Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Contextual Info: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.

7333 A

Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70

bf199 equivalent

Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Contextual Info: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

658uA

Contextual Info: Application Note Full Mold Type Chopper Type Switching Regulator IC SI-8000JF Series 5th Edition December 2005 SANKEN ELECTRIC CO., LTD. SI-8000JF －－－ Contents －－－ 1. General Description 1-1 Features －－－－－－－－－－ 3 1-2 Applications

Contextual Info: A25 / SMA25 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • MEDIUM OUTPUT LEVEL: +9 dBm TYP. • WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Description The A25 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and

MPSA14

Abstract: transistor 7333
Contextual Info: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1

bf199 equivalent

Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Contextual Info: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40

TO-92 CASE MPSA06

Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70

MPSA44

Abstract: 9016 transistor
Contextual Info: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low

pin configuration pnp transistor mpsa92

Abstract: mpsa92 MPSA42 9016 transistor
Contextual Info: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,