TRANSISTOR J 6 Search Results

Contextual Info: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily

2C33

Abstract: IR2C33
Contextual Info: I 7-U nit 60m A Transistor Array ^ — IR2C33 I IR 2C 33 7-Unit 60mA Transistor Array Pin Connections Description The IR2C33 is a 7-circuit driver. • Features IN! [T — IN j QT IN j U IN j | T IN ì U IN n [I IN rU G N D J 1. Output breakdown voltage BV ceo=20V (MAX.

t25000

Abstract: QM10HB-2H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j

2SA675

Abstract: t430 transistor t430 T591 PA33 ss-3r
Contextual Info: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £

QM10TD-H

Abstract: mitsubishi air conditioner transistor 102 QM10T
Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM10TD-H ! MEDIUM POWER SWITCHING USE [ _ INSULATED TYPE j CUVI10TD-H • Ic Collector cu rren t. 10A j • V c ex Collector-emitter vo ltag e . 600V ;

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

IR2415

Abstract: voltage protection diode APD Array
Contextual Info: 6-Unit 400mA.Darlington Transistor Array IR2415 • ' ooonaa o | aisoJia 7-J-J . / 3 - 0 7 IR 2 4 1 5 6-Urüt 400mA Darlington Transistor Array Description The IR2415 is a 6-circuit driver with an internai negative input voltage protection diode. It is useful

Contextual Info: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A

CA3103E

Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183
Contextual Info: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays

MPS6560

Abstract: audio transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage

1200 va ups circuit diagram

Abstract: transistor BA RW QM15
Contextual Info: i j I MITSUBISHI TRANSISTOR MODULES I j QM150DY-24K I % j HIGH POWER SWITCHING USE j S INSULATED TYPE j j j QM150DY-24K • • • • • lc Collector current. 150A Vcex Collector-emitter voltage. 1200V hFE DC current gain.75

Contextual Info: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U

BLW60C

Contextual Info: , Line, J.£.i±£.ii tx >J TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

transistor ld3

Abstract: 2SK704 ld3a
Contextual Info: 6427525 N E C N E C E L E C T R O N ICS I| ELECTRONICS INC 98D 18 _I> E J 1 b L t 5 ^’ s a s J r j U 4 o o is o a ? N-CHANNEL M OS FIELD EFFECT POWER TRANSISTOR 2SK704 DESCRIPTION The 2SK704 is N-Channel MOS Field Effect Power Transistor PACAKGE DIMENSIONS

Contextual Info: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data t'- LO C \J cg 2o: e3 Emitter - t - î Sensor 1 Circuitry -o3 V 1o- -o4 GPX06992 C\J O

KST4403

Contextual Info: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C | 1“ Characteristic i Symbol Rating 1 Unit 1 i Collector-Base Voltage | Collector-Emitter Voltage j Emitter-Base Voltage j Collector Current Collector Dissipation

33T4

Abstract: CSB834 CSD880
Contextual Info: CSD880 CSD880 NPN PLASTIC POWER TRANSISTOR Audio frequency Power Amplifier Applications Complementary CSB834 j|f j ! ! I J * DIM MIN MAX A 14.42 16.51 B 9,63 10.67 C 3,56 4.83 0.90 E 1,15 1.40 F 3.75 3,66 G 2.29 2.79 H 2.54 3.43 J 0,56 K 12.70 14.73 L 6.35

QM20TD-9

Contextual Info: I MITSUBISHI TRANSISTOR MODULES ! QM20TD-9 | MEDIUM POWER SWITCHING USE j INSULATED TYPE I I QM20TD-9 • te • VCEX • hFE Collector current. 20A j Collector-emitter voltage. 500V j DC current gain.75 j

acrian RF POWER TRANSISTOR

Abstract: JTDA50 JTDA50-2 Scans-00115670
Contextual Info: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for

Contextual Info: 7^0741 SSE D SANKEN ELECTRIC CO LT» 0000=175 60S * S A K J Silicon NPN Epitaxial Planar ☆ High hFE Transistor, Low VcEisat Transistor ☆ Switching Transistor SC4024 Application Example: DC to DC Converter, Emergency Lighting Inverter, and General Purpose

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

BC450

Contextual Info: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

QM15

Abstract: QM150DY-24
Contextual Info: j MITSUBISHI TRANSISTOR MODULES I j Q M 150D Y-24BK j HIGH POWER SWITCHING USE j |5;_ . INSULATED TYPE | ._ ! j QM15QDY-24BK • Ic Collector c u rre n t. 150A » Vc e x Collector-em itter v o lta g e . 1200V

transistor c1684

Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
Contextual Info: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from