TRANSISTOR ITT 108 Search Results

T02I

Abstract: 0040II
Contextual Info: UNCONTROLLED DOCUMENT REV, A B PART NUMBER REV. 0CP-PCT4116/E-TR B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & #10776. E.C.N. #10815. DATE 6.16.01 12.6.01 RECOMMENDED SOLDER PAD LAYOUT TOP VIEW 2 .5 4 E0.1003 <7 PLS, L 1.90 [0 .07 5 ] _ P <2 PLS.)

Contextual Info: WVUEREX KD221K75 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d rH n Q tO n Transistor Module 75 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor M odules are high power devices designed for use

2sa1757 transistor

Abstract: A1757 2SA series transistor ITT 108 2sa1757
Contextual Info: 2SA1757 Transistor, PNP Features Dimensions Units : mm • available In TO-220FP (SC-67) package • high speed switching, typically t{ = 0.15 jas at lc = - 3 A • low collector saturation voltage, typically VCE(sat) = -0.2 V at lC/ lB = -3 A/-0.15 A •

Contextual Info: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW REV, A B NOTES: 1 cf ib a 1 1.3, ANODE/CATHODE 2 cf Ï3 7 2 2.4. CATHODE/ANODE 3 cf 3= 6 3 4 ci 5 4 2 O CP -PCT 228/A -T R B E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & #10776. E.C.N. #10815. 6.8. COLLECTOR

itt ol 170

Contextual Info: Edition May 15, 1997 6251-437-1PD ITT INTERMETALL 4bflE711 0 0 0 b S 7 b 234 VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 9 10 10 11 11 11 11 11 11 12 12 13 13 13 14 15 15 15 16 17 17 17 17 18 18 18

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

Contextual Info: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R

Triac SC141D

Abstract: Opto triac ot 195 schematic diagram inverter 2000w schematic diagram power inverter 1500w 12v 1200W DC POWER SUPPLY SCHEMATIC scr 106d st4 diac solar tracking street light system schematic diagram of 2000W induction heater 400W sine wave inverter circuit diagram
Contextual Info: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , Q.3A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 1 BOA COLD

Contextual Info: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. 0 C P - P C T 4 1 1 6 /E - T R B E.C.N. NUMBER AND REVISION COMMENTS A B E.C.N. #10BRDR. & #10776. E.C.N. #10815. DATE 6.16.01 12.6.01 RECOMMENDED SOLDER PAD LAYOUT TOP VIEW 2.54 E0.1003 <7 PLS, L 1.90 [0.075] _ P

2SK49

Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
Contextual Info: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,

5Bp smd transistor data

Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
Contextual Info: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a

transistor BC-108

Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
Contextual Info: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab

Transistor BC 227

Contextual Info: ML.Ö5711 DDObñBD T 3 3 VPX 3225D, VPX 3224D PRELIMINARY DATA SHEET Contents Page Section Title 5 5 1. 1.1. Introduction System Architecture 9 9 9 10 10 10 11 11 12 12 13 14 15 16 16 16 17 17 17 18 20 20 20 21 21 22 24 24 24 24 24 26 27 28 28 29 29 2. 2.1.

1581m

Abstract: nec ps2021 PS2021 M5010
Contextual Info: PHOTO CO U PLER PS2021 PHOTO CO U PLER High Isolation Voltage Single Transistor — n epo c s e r ie s - D E S C R IP T IO N The PS2021 is an optically coupled Isolator containing a G aA s light emitting diode and an NPN silicon photo transistor. FEA TU RES

74ls82

Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
Contextual Info: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all

40 pins ic used in color television with ir captu

Abstract: semiconductors cross index itt capacitors itt capacitor semiconductors cross reference ITT Intermetall 200H 65C02 K6S6 413027
Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

sje 2762

Abstract: uPA671T transistor a935 a935 transistor ic-8845
Contextual Info: h — '> U =1 > Silicon Transistor UPA671T P N P X l h 7 > fé J ^ Æ v 7 ^ 6 t f > 2 IU îèS Ü 'f iÆ /¿PA671TO, h 7 > v Z $ £20Ï&F*3Ü? U/c 5 K x / \ '< x U , Ü H æ j f CD[S]±, x h ^ g lM i;: » i l / S t o <=D m o S C - 7 0 / \° "J * T- v £ IH D tt- - f X < D / \" "J >t -

ITT ccu 3000 i

Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

A 928 000 158

Contextual Info: T h a lHEWLETT ft"EM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1500 MHz Technical Data UTO/UTC 1511 Series Features Description Pin Configuration • Frequency Range: 5 to 1500 MHz The 1511 Series is a low-noise, wideband thin-film bipolar RF

dc cdi schematic diagram

Abstract: ac cdi schematic diagram cdi schematic d flip flop using gdi techniques level shifter from TTL to CMOS bidirectional cdi schematics transistor BC 945 a8508 cdi wiring diagram California Devices
Contextual Info: x " 7 / CD! ?. ? CHA SERIES HCMOS Channelless Cell Arrays C A U FO R N IA DEVICES IN C. Septem ber 1985 PRODUCT FEATUJ5ES CHA SERIES FAMILY ORGANIZATION Part Number From 210 to 18,000 equivalent 2-input gates, lay« metal used for global and intracell ^ Q oouble

Contextual Info: AVANTEK INC 20E D • AVANTEK i m n t t QGDbSlb 4 AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor ^T3 Avantek 70 mil Package Features • • Low B ias Current Operation: Low Noise Figure: 1.8 d B typical at 2.0 G Hz 2.8 d B typical at 4.0 G Hz

D100E

Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Contextual Info: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered