TRANSISTOR IC 1A DATASHEET Search Results

TS16949

Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Contextual Info: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

FMMT591TA

Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
Contextual Info: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction

marking 1F7

Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

Contextual Info: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement

TS16949

Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
Contextual Info: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where

4018 datasheet

Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Contextual Info: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

TS16949

Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

ZXTN25100CFH

Abstract: design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER
Contextual Info: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA
Contextual Info: ZXTP25100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 1A VCE(sat) < -225mV @ 1A RCE(sat) = 155m⍀ PD = 2.4W Complementary part number ZXTN25100DZ Description C Advanced process capability and package design have been used to

FCX591A

Abstract: FCX591ATA Diodes Incorporated 17-33 FCX491A 17-33 sot89
Contextual Info: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • BVCEO > -40V IC = -1A Continuous Collector Current Low saturation voltage VCE sat < -500mV @ -1A

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

ZXTN25100CFH

Contextual Info: A Product Line of Diodes Incorporated ZXTP25100CFH 100V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A VCE sat < -220mV @ -1A

FCX591ATA

Abstract: Diodes Incorporated 17-33 FCX491A FCX591A 17-33 sot89 DIODES Inc diodes marking
Contextual Info: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > -40V High current capability IC = -1A Low saturation voltage VCE(sat) < -500mV @ -1A

FCX591A

Contextual Info: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -40V Maximum Continuous Current IC = -1A Low saturation voltage VCE sat < -500mV @ -1A

Contextual Info: A Product Line of Diodes Incorporated Green FZT491A NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 40V Max Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A

complementary MOSFET sot89

Abstract: SOT89 MARKING CODE 3B
Contextual Info: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V IC = 1A high Continuous Current Low saturation voltage VCE sat < 500mV @ 1A

fzt591a

Contextual Info: A Product Line of Diodes Incorporated Green FZT591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -40V IC = -1A high Continuous Current Low saturation voltage VCE sat < -500mV @ -1A

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

SILICON PNP POWER TRANSISTOR

Abstract: y135
Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current: IC = -1A • Collector Dissipation: PC = 2W ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC (Pulse) PC TJ T STG Collector-Base Voltage

MARKING N2

Contextual Info: A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 40V IC = 1A high Continuous Current Low saturation voltage VCE sat < 500mV @ 1A

Diodes Incorporated 17-33

Abstract: DS-33010 complementary MOSFET sot89 BCX6825TA
Contextual Info: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V High current capability Maximum Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A

Contextual Info: KSB564A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92 • Complement to KSD471A • Collector Current: IC = -1A • Collector Dissipation: PC = 800mW ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ