TRANSISTOR HIGH VOLTAGE Search Results

AT-30533-TR1

Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA

mpsa92

Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
Contextual Info: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance

H05 SOT23 5

Abstract: A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96
Contextual Info: HFA3134, HFA3135 TM Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

TRANSISTOR 7812

Abstract: HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B 8660
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 TM Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1

NTE2325

Contextual Info: NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V Max D High Speed Switching: tf = 0.7µs (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

GT60M101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0

BV E1 382 1229

Abstract: transistor BF 502
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain

2SJ201

Abstract: 2SJ20
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

2sk792

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK792 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. . High Breakdown Voltage : V(gR)q s s =900V Unit in mm 1 0.3MAX. , 0 3 .6 ¿0.2 . High Forward Transfer Admittance : ]Yfs | =1.0S(Typ.)

GT20D201

Abstract: GT20D101 10S0V
Contextual Info: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201

2SK1378

Abstract: 400V INDUSTRIAL voltage regulator Field Effect Transistor Silicon N Channel MOS 400V voltage regulator
Contextual Info: FIELD EFFECT TRANSISTOR 2SK1378 SILICON N CHANNEL MOS TYPE ar-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEEO, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Q.3HAÏ. <3.6>0.2 FEATURES: . High Breakdown Voltage : V(BR)DSS=400V

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

2SK386

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK386 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATION'S. Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. X- 20.5MAX. ^3.3±Q2 d— -1Tm

Contextual Info: TOSHIBA 2SC2712 Transistor Unit in mm Silicon NPN Epitaxial Type + 0.5 2 . 5 - 0.3 + 0.25 1 . 5 - 0.15 Audio Frequency General Purpose -M Amplifier, Driver Stage Applications Features • High Voltage and High Current - VCE0 = 50V Min. , Ic = 150mA (Max.)

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

MGD624

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 PN2907A PNP switching transistor Product data sheet Supersedes data of 1997 May 05 2004 Oct 11 NXP Semiconductors Product data sheet PNP switching transistor PN2907A FEATURES PINNING • High current max. 600 mA

Contextual Info: GT8J102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) Unit in mm O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage

Contextual Info: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)

transistor B1202

Abstract: b1202 t b1202 transistor B1202 S 23 b1202 TO-252 D1802 b1202 transistor 2SB1202ST 2SD1802T-TL-E 2sb1202t-tl-e
Contextual Info: 2SB1202/2SD1802 Ordering number : EN2113D SANYO Semiconductors DATA SHEET 2SB1202/2SD1802 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

DS99004

Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous

Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VQgg = 180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SJ313 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

IAR13

Abstract: S1998
Contextual Info: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS T0-220FL Unit in m m CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS