TRANSISTOR HIGH POWER Search Results

C2E1

Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

QCA150BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA50A

Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V

MJD18002D2

Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain

Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with

QCA50AA100

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 （M） QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

BULD39D

Abstract: BULD39D-1 BULD39DT4 JESD97
Contextual Info: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power

BUH315D

Contextual Info: BUH315D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. 3 APPLICATIONS

PHP2N40E

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

st 393

Abstract: BUL705 JESD97
Contextual Info: BUL705 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C

TRANSISTOR MARKING CODE TP

Abstract: Vbe 40 transistor CJD13003 npn switching transistor Ic 100mA
Contextual Info: CJD13003 NPN SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD13003 type is an NPN Silicon Power Transistor manufactured in a surface mount package designed for high voltage, high speed power switching inductive applications.

BU2522AF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

TVU100

Abstract: 100-W TRANSISTOR S 838 ASI10651
Contextual Info: TVU100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness.

BU1507AX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

Contextual Info: 2SC4538R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters

2sc3320

Abstract: 2sc3320 equivalent 2sc3320 transistor
Contextual Info: 2SC3320 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

BD807

Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

MP-25

Abstract: NP55N06CLD NP55N06DLD NP55N06ELD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

D1403

Abstract: NP80N03ELE NP80N03KLE NP80N03DLE MP-25 NP80N03CLE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

BV E1 382 1229

Abstract: transistor BF 502
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain

D1414

Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

d1413

Abstract: MP-25 NP82N055CHE NP82N055DHE NP82N055EHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.