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    TRANSISTOR HIGH POWER Search Results

    TRANSISTOR HIGH POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    TRANSISTOR HIGH POWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab PDF

    QCA150BA60

    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA150BA60 UL;E76102 (M) QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    QCA150BA60 E76102 QCA150BA60 trr200ns) 95max 110Tab 50msec50sec 100sec50msec PDF

    QCA50A

    Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
    Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V


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    QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B40 QCA50B60 QCA50A40 QCA50A60 QCA50B40 QCA50A QCA50A60 QCA50B60 PDF

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


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    MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 PDF

    Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with


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    APT13005 O-220-3, O220-3 O-220F-3 APT13005 O-220F-3 O-220-3 O-220-3 PDF

    QCA50AA100

    Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 (M) QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


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    QCA50AA100 E76102 QCA50AA100 VCEX1000V IC50A, 30max. AMP110TAB IB11A VCC600V PDF

    BULD39D

    Abstract: BULD39D-1 BULD39DT4 JESD97
    Contextual Info: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power


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    BULD39D-1 BULD39DT4 O-252) O-251) O-251 O-252 2002/93/EC BULD39D BULD39D-1 BULD39DT4 JESD97 PDF

    BUH315D

    Contextual Info: BUH315D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. 3 APPLICATIONS


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    BUH315D ISOWATT218 E81734 ISOWATT218 BUH315D PDF

    PHP2N40E

    Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


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    O220AB PHP2N40E PHP2N40E PDF

    st 393

    Abstract: BUL705 JESD97
    Contextual Info: BUL705 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C


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    BUL705 2002/93/EC O-220 st 393 BUL705 JESD97 PDF

    TRANSISTOR MARKING CODE TP

    Abstract: Vbe 40 transistor CJD13003 npn switching transistor Ic 100mA
    Contextual Info: CJD13003 NPN SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD13003 type is an NPN Silicon Power Transistor manufactured in a surface mount package designed for high voltage, high speed power switching inductive applications.


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    CJD13003 26-August 200mA TRANSISTOR MARKING CODE TP Vbe 40 transistor CJD13003 npn switching transistor Ic 100mA PDF

    BU2522AF

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


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    BU2522AF BU2522AF PDF

    Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


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    KSC5603D O-220 PDF

    TVU100

    Abstract: 100-W TRANSISTOR S 838 ASI10651
    Contextual Info: TVU100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness.


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    TVU100 TVU100 060x45° ASI10651 100x45° 100-W TRANSISTOR S 838 ASI10651 PDF

    BU1507AX

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.


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    BU1507AX BU1507AX PDF

    Contextual Info: 2SC4538R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters


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    2SC4538R PDF

    2sc3320

    Abstract: 2sc3320 equivalent 2sc3320 transistor
    Contextual Info: 2SC3320 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters


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    2SC3320 SC-65 2sc3320 2sc3320 equivalent 2sc3320 transistor PDF

    BD807

    Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
    Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.


    OCR Scan
    G0fi47til BD805 BD809 BD806 BD807 Temperatu03 AN-415) transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 adc 809 PDF

    MP-25

    Abstract: NP55N06CLD NP55N06DLD NP55N06ELD
    Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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    NP55N06CLD NP55N06DLD NP55N06ELD NP55N06CLD O-262 O-220AB NP55N06DLD O-263 MP-25 NP55N06ELD PDF

    D1403

    Abstract: NP80N03ELE NP80N03KLE NP80N03DLE MP-25 NP80N03CLE
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    NP80N03CLE NP80N03DLE NP80N03ELE NP80N03KLE NP80N03CLE NP80N03DLE O-262 NP80N03ELE O-220AB O-263 D1403 NP80N03KLE MP-25 PDF

    Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


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    NDS9933A PDF

    BV E1 382 1229

    Abstract: transistor BF 502
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain


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    BFT93W OT323 BFT93. BFT93W MBC870 OT323. R77/01/pp22 BV E1 382 1229 transistor BF 502 PDF

    D1414

    Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE O-262 O-220AB NP88N055DHE O-263 O-220AB) D1414 NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400 PDF

    d1413

    Abstract: MP-25 NP82N055CHE NP82N055DHE NP82N055EHE
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    NP82N055CHE, NP82N055DHE, NP82N055EHE NP82N055CHE O-220AB NP82N055DHE O-262 O-263 O-220AB) d1413 MP-25 NP82N055CHE NP82N055DHE NP82N055EHE PDF