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    TRANSISTOR HIGH POWER Search Results

    TRANSISTOR HIGH POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    TRANSISTOR HIGH POWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1743

    Abstract: C11531E
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


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    2SA1743 2SA1743 C11531E PDF

    2SC4551

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


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    2SC4551 2SC4551 PDF

    transistor BUX

    Abstract: BUX14 TR07
    Contextual Info: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


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    BUX14 CB-19 transistor BUX BUX14 TR07 PDF

    2SC4351

    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for


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    2SC4351 2SC4351 PDF

    MJE13009d

    Abstract: 1A 300V TRANSISTOR MJE13009-D
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.


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    MJE13009D MJE13009D QW-R203-041 1A 300V TRANSISTOR MJE13009-D PDF

    QCA300BA60

    Abstract: 675g M6 transistor
    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA300BA60 UL;E76102 (M) QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor PDF

    2SC4815

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


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    2SC4815 2SC4815 PDF

    D1558

    Abstract: 2SA1840
    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1840 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.


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    2SA1840 2SA1840 D1558 PDF

    2SC3569

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as


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    2SC3569 2SC3569 PDF

    2SA1843

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


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    2SA1843 2SA1843 PDF

    Transistor TL 31 AC

    Abstract: j142
    Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


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    SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142 PDF

    UN1518

    Abstract: UN1518L-AE3-R UN1518G-AE3-R
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) „ ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R


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    UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518L-AE3-R UN1518G-AE3-R PDF

    QCA30B60

    Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
    Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 94max 110TAB 32max 31max 35max QCA30B60 QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1 PDF

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab PDF

    QCA150A60

    Abstract: QBB150A60 high power transistor module QBB150A40 QCA150A QCA150A40
    Contextual Info: TRANSISTOR MODULE QCA150A/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlington power transistor module with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA150A Series-connected type


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    QCA150A/QBB150A40/60 E76102 QCA150A QBB150A 400/600V QCA150A40 QCA150A60 QBB150A40 QCA150A60 QBB150A60 high power transistor module PDF

    IC-100A

    Abstract: QCA100BA60 hFE-750
    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA100BA60 UL;E76102 (M) QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    QCA100BA60 E76102 QCA100BA60 trr200ns) 95max 110Tab 50msec50sec 100sec50msec IC-100A hFE-750 PDF

    DA QW

    Abstract: TUL1203 TUL1203G-TA3-T TUL1203L-TA3-T
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TUL1203 Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The TUL1203 is manufactured by using high voltage Planar technology for high voltage capability and high switching speeds.


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    TUL1203 TUL1203 TUL1203L-TA3-T TUL1203G-TA3-T O-220 QW-R203-038 DA QW TUL1203G-TA3-T TUL1203L-TA3-T PDF

    QCA150BA60

    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA150BA60 UL;E76102 (M) QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    QCA150BA60 E76102 QCA150BA60 trr200ns) 95max 110Tab 50msec50sec 100sec50msec PDF

    2SA1646

    Abstract: 2SA1646-Z C11531E
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter


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    2SA1646, 2SA1646-Z 2SA1646 2SA1646-Z C11531E PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


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    2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T PDF

    QCA75BA60

    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA75BA60 UL;E76102 (M) QCA75BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    QCA75BA60 E76102 QCA75BA60 trr200ns) 31max 110TAB VCEX600V hFE750 50msec50sec 100msec50sec PDF

    QCA50A

    Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
    Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V


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    QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B40 QCA50B60 QCA50A40 QCA50A60 QCA50B40 QCA50A QCA50A60 QCA50B60 PDF

    Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


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    2SB1260 2SB1260 OT-89 100ms QW-R208-017 PDF

    d1726

    Abstract: 2SC4336
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4336 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4336 is a mold power transistor developed for high- 10.5 MAX. speed switching and features a very low collector-to-emitter


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    2SC4336 2SC4336 d1726 PDF