TRANSISTOR H9 Search Results

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

H9 transistor marking

Abstract: LDTC124GWT1G transistor h9 MARKING H9 h922 h9 MARKING
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

RN1910FS

Abstract: RN1911FS RN2910FS RN2911FS
Contextual Info: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

BUK474-600B

Contextual Info: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 BUK474-600B PowerMOS transistor SbE D PHILIPS INTERNATIONA GENERAL DESCRIPTION N -channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope.

BUF644

Abstract: B12-B1 buf644 transistor
Contextual Info: Tem ic BUF644 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Application Notes

Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the

transistor h9

Abstract: PIMH9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

B12-B1

Contextual Info: T e m ic BUF744 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

transistor 2n5038

Abstract: 2N5038
Contextual Info: Data Sheet No. 2N5038 Generic Part Number: 2N5038 Type 2N5038 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power transistor for use in high speed switching applications. • Housed in TO-3 case.

h935

Contextual Info: Data Sheet No. 2N5039 Generic Part Number: 2N5039 Type 2N5039 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power transistor for use in high speed switching applications. • Housed in TO-3 case.

Contextual Info: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

CHEMH9GP

Abstract: H9 transistor marking
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMH9GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.

smd transistor 304

Abstract: cdfp4-f16
Contextual Info: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

Contextual Info: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz

Contextual Info: TO SHIBA HN3B01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HNBB01F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. +0.2 2.8-0.3 +0.2 1.6-0.1 Ql: High Voltage and High Current : V(2EO = 50V, Iç = 150mA (Max.)

Diode SMD ED 9C

Abstract: transistor smd marking Kd LA 5530
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. F ea tu r es • D ual M arked w ith D ev ice

H928S

Abstract: H928 KSA928A DSA0045619 transistor ksA928A
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 KSA928A H928S █ 主要用途 █ 外形图及引脚排列 作音频放大。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃

PG-TO252-3-11

Abstract: H9N03LA TO252-3 PG-TO-252-3-11 TO252-3-11 JESD22 h9n03 H9N03L
Contextual Info: IPDH9N03LA G OptiMOS 2 Power-Transistor IPSH9N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 9.2 mΩ ID 30 A • N-channel, logic level

cdfp4-f16

Abstract: smd transistor FY smd transistor ka HS6254
Contextual Info: HS-6254RH HARRIS S E M I C O N D U C T O R PRELIMINARY Radiation Hardened Ultra High Frequency NPN Transistor Array October 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements . • Radiation Environment - Gamma Dose y . 3 x 1 0 RAD(Si)

1DI300ZN-1

Abstract: JE711 JE71 B348 zener ci 5t
Contextual Info: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

G7 marking Code

Abstract: hf power transistor mosfet transistor h9 C5 MARKING TRANSISTOR M177 SD4933
Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european