TRANSISTOR H44 Search Results
TRANSISTOR H44 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR H44 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DTC114TE DTC114TUA DTC114TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTC114TE, DTC114TUA, and DTC114TKA; 04 a built-in bias resistor allows inverter |
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DTC114TE DTC114TUA DTC114TKA SC-70) SC-59) DTC114TE, DTC114TUA, DTC114TKA; DTC114TE h-44-! | |
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
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108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 | |
RCA-CD4007Contextual Info: ¿ o c lO è Types CM OS Dual Complementary Pair Plus Inverter H ig h -V o lta g e T y p e s 2 0 - V o lt R a tin g The RCA-CD4007UB types are comprised o f three n-channel and three p-channel enhancem ent-type MOS transistors. The transistor elements are accessible through the package |
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RCA-CD4007UB CD4007UB 14-lead 14-lMENSIONS RCA-CD4007 | |
Contextual Info: HE WLETT-PACKARD/ CMPNTS blE J> m H4475ß4 Q4D • H P A INA-03100 H EW LETT PACKARD M agIC Low Noise, Cascadable Silicon Bipolar MMIC Am plifier Chip Outline^ Features • • • • • • Q010D25 Cascadable 50 ft Gain Block Low Noise Figure: 2.5 dB typical at 1.5 GHz |
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H4475Ã INA-03100 Q010D25 INA-03100 minimu19 | |
bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
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8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361 | |
HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
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PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035 | |
L66C
Abstract: C1f TRANSISTOR ECG906 transistor HJ 388 MAC15
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ECG906 6CQ906 T-74-09-01 ECG906 L66C C1f TRANSISTOR transistor HJ 388 MAC15 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product |
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LUMF23NDW1T1G S-LUMF23NDW1T1G AEC-Q101 SC-88 LUMF23NDW1T3G S-LUMF23NDW1T3G | |
LUMF23NDW1T3G
Abstract: transistors marking HJ mh 7489 789 marking
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LUMF23NDW1T1G SC-88 3000/Tape LUMF23NDW1T3G 10000/Tape LUMF23NDW1T3G transistors marking HJ mh 7489 789 marking | |
Contextual Info: TC58V16BFT TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X |
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TC58V16BFT TC58V16 264-byte, 264-byte | |
Contextual Info: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. Tne device is organized as 264 byte X |
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TC58V16BFT TC58V16 264-byte, 264-byte | |
Contextual Info: TOSHIBA TC5816BFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X |
OCR Scan |
TC5816BFT TC5816 264-byte, 264-byte | |
TRANSISTOR IFW
Abstract: intel g31 chipset motherboard ba21 transistor Intel BGA bpm signal processor intel g41 intel Penryn transistor BD28 transistor Bb26 ba17 diode
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Intel BGA
Abstract: intel g31 chipset motherboard
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6 Pin LED PIRANHA
Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
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D-85737 SE-573 6 Pin LED PIRANHA everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X | |
PHOTO TRANSISTOR 940nm
Abstract: transistor h44
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IS09001 QS9000 ITR8402 940nm. ITR8402 PHOTO TRANSISTOR 940nm transistor h44 | |
eq7 instruction manual
Abstract: submersible motor winding formula
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Contextual Info: PTFC262157FH advance specification Confidential, Limited Internal Distribution Description advance specification Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Advance Specification Data Sheets describe products that are being considered by Infineon |
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PTFC262157FH PTFC262157FH | |
transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
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T9550
Abstract: intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41
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45-nm T9550 intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41 | |
transistor BC33Contextual Info: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family August 2008 Document Number: 320120-002 |
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45-nm transistor BC33 | |
PSW31BContextual Info: ELECTRONIC PRESSURE SWITCHES WITH DIGITAL DISPLAY PSW32 Series PSW31 Series Digital Hydraulic Switch Digital Pneumatic Switch PSW30 series pressure switches are electronic devices for pressure monitoring. The switches consist essentially of an integral pressure sensor, microprocessor evaluation circuitry, |
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PSW32 PSW31 PSW30 PSW32 PSW31 PSW30 PSW32) PSW31B | |
diagram wiring mitsubishi elevator
Abstract: FR-D740-012 mitsubishi MODBUS RTU FR-D740-036 FR-D740-120 FR-D700 mitsubishi motor SF-HRCA FR-BSF01 MITSUBISHI INVERTER FR-D720S
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FR-D700-EC FR-D700 FR-D740-012 FR-D720S-008 -0600353ENG-C FR-D700 diagram wiring mitsubishi elevator mitsubishi MODBUS RTU FR-D740-036 FR-D740-120 mitsubishi motor SF-HRCA FR-BSF01 MITSUBISHI INVERTER FR-D720S | |
82801IBM
Abstract: diode AH44 82801ibm ich9m Socket 478 VID pinout intel mvp-6 T3500
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45-nm 82801IBM diode AH44 82801ibm ich9m Socket 478 VID pinout intel mvp-6 T3500 |