TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
|
Original
|
OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
|
PDF
|
BLF888
Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
|
Original
|
BLF888
BLF888
dvb-t2
j3076
Technical Specifications of DVB-T2 Transmitter
EZ90-25
ttf 103
C4532X7R1E475MT020U
RF35
sot979
EZ90-25-TP
|
PDF
|
blf878
Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
Contextual Info: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from
|
Original
|
BLF878
BLF878
ez90
j4213
Bv 42 transistor
J0314
Reference blf878
|
PDF
|
BLF888
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
|
Original
|
BLF888
BLF888
|
PDF
|
C570X7R1H106KT000N
Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
|
Original
|
BLF642
771-BLF642112
BLF642
C570X7R1H106KT000N
SOT467
Technical Specifications of DVB-T2 Transmitter
DVB-T2
blf642,112
C570x
|
PDF
|
BLF872
Abstract: ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP
Contextual Info: BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from
|
Original
|
BLF872
BLF872
ez90
rogers 5880
OFDM transmitter UHF
EZ90-25-TP
|
PDF
|
PHP2N60
Abstract: PHP6N60E
Contextual Info: Philips Semiconductors Product specification -PowerMOS transistor PHP2N60 -
|
Original
|
PHP2N60
PHP2N60
PHP6N60E
|
PDF
|
MRC165
Abstract: PMBF4416 PMBF4416A MRC168 mrc160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A
|
Original
|
PMBF4416;
PMBF4416A
MAM385
PMBF4416:
PMBF4416A:
MRC165
PMBF4416
PMBF4416A
MRC168
mrc160
|
PDF
|
PHP4N40
Abstract: PHX1N60 PHX2N40
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
Original
|
OT186A
PHX2N40
PHP4N40
PHX1N60
PHX2N40
|
PDF
|
PHP2N60
Abstract: PHX1N60
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
Original
|
OT186A
PHX1N60
PHP2N60
PHX1N60
|
PDF
|
PHP3N50
Abstract: PHX1N60 PHX2N50
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
Original
|
OT186A
PHX2N50
PHP3N50
PHX1N60
PHX2N50
|
PDF
|
PHP5N40
Abstract: PHX2N60 PHX4N40
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
Original
|
OT186A
PHX4N40
PHP5N40
PHX2N60
PHX4N40
|
PDF
|
|
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
OCR Scan
|
PHX1N60
|
PDF
|
PHP3N60
Abstract: PHX2N60
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
Original
|
OT186A
PHX2N60
PHP3N60
PHX2N60
|
PDF
|
|
|
transistor D 4515
Abstract: 100-P BUK556-60A A1730
Contextual Info: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
|
OCR Scan
|
BUK556-60A
PINNING-T0220AB
-ID/100
transistor D 4515
100-P
A1730
|
PDF
|
PHP4N50
Abstract: PHX2N60 PHX4N50
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
|
Original
|
OT186A
PHX4N50
PHP4N50
PHX2N60
PHX4N50
|
PDF
|
BLF177
Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION
|
Original
|
BLF177
SC08a
MBB072
MLA876
OT121
BLF177
SOT121 Package
727 Transistor power values
2222 122 capacitor philips
transistor marking code HF
MGP100
2222 632 series capacitor
2222 852 47103
|
PDF
|
PHP8N50E
Abstract: PHX5N50E
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP8N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
|
Original
|
PHP8N50E
OT186A
PHX5N50E
PHP8N50E
PHX5N50E
|
PDF
|
BUK457-500B
Abstract: PHP8N50 PHW9ND50 FREDFET
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge
|
Original
|
OT429
PHW9ND50
BUK457-500B
PHP8N50
PHW9ND50
FREDFET
|
PDF
|
pn4416
Abstract: MRC165 PN4416A MRC168
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES QUICK REFERENCE DATA
|
Original
|
PN4416;
PN4416A
PN4416
pn4416
MRC165
PN4416A
MRC168
|
PDF
|
48c zener diode
Abstract: philips surface mount zener diode BUK553-48C BUK563-48C
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
|
Original
|
OT404
BUK563-48C
48c zener diode
philips surface mount zener diode
BUK553-48C
BUK563-48C
|
PDF
|
BLF147
Abstract: resistor gp series 71005 transistor d1 391 SOT121B SOT121 Package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF147 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF147 PIN CONFIGURATION • High power gain • Low intermodulation distortion
|
Original
|
BLF147
MBB072
MLA876
OT121
BLF147
resistor gp series
71005
transistor d1 391
SOT121B
SOT121 Package
|
PDF
|
BLF1048
Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A FEATURES • High power gain
|
Original
|
M3D379
BLF1048
OT502A
125108/00/02/pp6
BLF1048
BP317
|
PDF
|
PHP10N40E
Abstract: PHX5N40E
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
|
Original
|
PHP10N40E
OT186A
PHX5N40E
PHP10N40E
PHX5N40E
|
PDF
|
