TRANSISTOR GE 703 Search Results

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

P-Channel IGBT

Contextual Info: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to

8206F

Abstract: transistor ge 703 BA8205 BA820 1SS131 B 773 transistor ML8205 BA6565A
Contextual Info: BA8206 BA8206F Tone ringer IC for telephone set The BA8206 and BA8206F are tone ringer ICs that generate an amplified tone signal when actuated by a ringing signal. The frequency of the tone can be varied by changing the constants of the external resistances and capacitors. The supply

702 TRANSISTOR

Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
Contextual Info: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives Unit Collector-base voltage

bux23

Contextual Info: • 7 ^ 5 ^ 5 3 7 P O S A I S 7 ■ 5 S G S -T H O M S O N lailllBiQglLllETfBQHniES_ BUX23 S G S-THOMSON 3QE D NPN SILICON TRANSISTOR D E S C R IP T IO N High speed, high current, high power NPN transis­ tor intended for use in switching and amplifier appli­

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

Contextual Info: Small Signal Transistor Arrays UNA0228 UN228 Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 0.2+0.1 –0.0 0.4±0.1 9 8 7 6 Parameter Symbol Rating Unit VCBO −12 V Collector-emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

TRANSISTOR MARKING ue

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK3866G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

ge-2 transistor

Abstract: transistor gt 322 MP 41 transistor drehkondensator transistor D 322 servicemitteilungen SERVICE-MITTEILUNGEN oszillator VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN GER-A
Contextual Info: SERVICE-MITTEILUNGEN VEB INOUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN r a d io -television AUSGABE: DATUM: 2/72 April 1972 Ersatzteilspezifikation für Koffersuper "Selena" Wir geben Ihnen nachstehend die Ersatzteilspezifikation für den Kofferempfänger "Selena" bekannt. Bitte verv/enden Sie bei der Be­

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

md918 Transistor

Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04534G Silicon NPN epitaxial planar type 高周波増幅用 • Package  Two elements incorporated into one package (Each transistor is separated)  Reduction of the mounting area and assembly cost by one half

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04501G Silicon NPN epitaxial planar type For general amplification • Package  Two elements incorporated into one package (Each transistor is separated)  Reduction of the mounting area and assembly cost by one half