TRANSISTOR G1 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

BFR96

Abstract: BFR96 TRANSISTOR transistor bfr96
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

MMBT5551A

Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

transistor case To 106

Abstract: BUT11A Transistor morocco 1300
Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and

Transistor morocco 1300

Abstract: but11a BUT11A APPLICATION ST BUT11A
Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

marking G1 sot23 UTC

Contextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s t ■

6R450E6

Abstract: E6 DIODE diode smd E6 IPx60R450E6 JESD22 6R45 to252 footprint wave soldering TRANSISTOR SMD MARKING CODE 42 IPA60R450E6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor 1 IPD60R450E6, IPP60R450E6 IPA60R450E6 Description

6R280C6

Abstract: to262 pcb footprint 6r280 c6 transistor SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE IPA60R280C6 IPB60R280C6 IPI60R280C6 IPP60R280C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6

65C6600

Abstract: ipa65r600c6 TRANSISTOR SMD MARKING CODE 2A IPx65R600C6 ID32 MOSFET TRANSISTOR SMD MARKING CODE 11 IPI65R600C6 infineon marking TO-252 IPD65R600C6 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R600C6 Data Sheet Rev. 2.0, 2010-08-19 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R600C6, IPI65R600C6 IPB65R600C6, IPP65R600C6

6R600C6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R600C6 IPB60R600C6 IPD60R600C6 IPP60R600C6 JESD22 to252 footprint wave soldering Diode SMD SJ 19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6

65c6380

Abstract: IPP65R380C6 IPB65R380C6 SJ 49A ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.0, 2010-10-22 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6

6R520C6

Abstract: IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6 IPA60R520C6 Description

SMD TRANSISTOR MARKING code TC

Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6

sot23 g1

Abstract: MMBT5551
Contextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .