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    TRANSISTOR FX Search Results

    TRANSISTOR FX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR FX Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D1485

    Abstract: 2SA1720
    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		2sa1720o-220d1485 PDF

    NEC 2sc4552

    Abstract: 2SC4552
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		2sc4552nec 2sc4552 PDF

    D1316

    Abstract: 2SA1744
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is


    Original     		2sa1744d1316 PDF

    TCA 785

    Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
    Contextual Info: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection


    OCR Scan     		cb-19tca 785transistor bux 48vu bux+2bux41sonde de temperature PDF

    2SC4351

    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for


    Original     		2sc4351 PDF

    2SD2161

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


    Original     		2sd2161o-220 PDF

    D1486

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


    Original     		2sd2162o-220d1486 PDF

    2SC4815

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2sc4815 PDF

    TRANSISTOR BO 346

    Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
    Contextual Info: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz


    OCR Scan     		bfx89q62702-f296transistor bo 346case bfx89+1power transisitor 100v 2a PDF

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		fl23sbos0g04737bfx55q60206-x55+9fl235bos3004xtransistor bfx 59634 transistorbfx 6363310-ad-10transistor bfx 90bfx 79 PDF

    2SA1847

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2sa1847 PDF

    MP-25

    Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
    Contextual Info: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.


    OCR Scan     		np40n06clcnp40n06dlcnp40n06elc175dgree+7027qmax1000pfo-220abo-262aao-220smdmp-25to-220smd PDF

    2SA1843

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2sa1843 PDF

    2SC5343

    Abstract: SUT495J kst60
    Contextual Info: SUT495J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT495J Package Code FX SOT-363 Outline Dimensions unit : mm


    Original     		sut495j2sc5343ot-363kst-6037-000+1kst60 PDF

    NEC semiconductor

    Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.


    Original     		2sd2217c11531enec semiconductortransistor pt 4500+1nec c11531e PDF

    EN5052

    Abstract: FX802 SB20W03P 2SB1302 50522
    Contextual Info: Ordering number:EN5052 FX802 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode Twin type • Cathode Common DC-DC Converter Features Package Dimensions · Complex type of a low saturation voltage, high speed switching and large current PNP transistor and


    Original     		en5052fx8022sb1302sb20w03p+150522 PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		fl23sbos0g04737q60206-x55bfx55+1023sbos150ma3004xsiemens b 58 451ge 639 transistor2114dtransistor bfx 73static ram 2114q2114tic 2116 m PDF

    2SC4553

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a


    Original     		2sc4553 PDF

    3356P

    Abstract: MC3356P
    Contextual Info: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ARRAY General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC INTEGRATED C IRCUIT The MC3346 is designed for general purpose, low power applications for con­


    OCR Scan     		mc33463356pmc3356p PDF

    sb30-03p

    Abstract: C51ST
    Contextual Info: Ordering num ber: E N 5028 No.5028 SA% YOi // _ FX401 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatures • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and


    OCR Scan     		fx4012sb1121sb30-03p300ma+2750mm2xc51st PDF

    D1558

    Abstract: 2SA1649 2SA1649-Z
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter


    Original     		2sa16492sa1649-zd1558 PDF

    sb30-03p

    Contextual Info: Ordering number:EN5028 FX401 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Shottky barrier


    Original     		en5028fx4012sb1121sb3003p+1sb30-03p PDF

    EN5028

    Abstract: FX401 2SB1121 sb30-03p
    Contextual Info: Ordering number:EN5028 FX401 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Shottky barrier


    Original     		en5028fx4012sb1121sb3003p+1sb30-03p PDF

    EN5387

    Abstract: FX901 PNP Transistor MOSFET
    Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low


    Original     		en5387fx901pnp transistor mosfet PDF