TRANSISTOR FS10 Search Results

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

lm340

Abstract: LM340-12 TO-3 LM340-5 TO-3 transistor LM340 LM340-24 LM340-8 LM3408 n38v LM340 voltage regulator LM340-1B
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS . OUTPUT CURRENT IN EXCESS OF 1A • INTERNAL THERMAL OVERLOAD PRO­ TECTION • NO EXTERNAL COMPONENTS RE­ QUIRED • OUTPUT TRANSISTOR SAFE AREA PROTECTION • INTERNAL SHORT CIRCUIT CURRENT LIMIT . AVAILABLE IN PLASTIC TO-220 AND

200 ampere MOSFET

Abstract: 200 Ampere power transistor diode 5 ampere FS10UM-5 transistor 5 100V, 200 A MOSFET igbt 600V 450v mosfet mosfet fs series transistor FS 10 SM
Contextual Info: mNEREX Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 MOS Numbering System DiSCtOtC IGBT Example: CT 75 AM - 12 (6 ) (3) (4) (5) CT75AM-12 is a 75 Ampere, 600V, Lead Mount, Insulated Gate Bipolar Transistor (5) Drive Voltage

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

FS10R06XL4

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

FS100R12KS4

Abstract: Di 762 transistor
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V IC,nom.

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

NH10A

Abstract: FS10R06XL4
Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS100R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200

FS100R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS100R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

FS100R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS100R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200

FS100R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS100R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

ka3525 12v to 230v inverters circuit diagrams

Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
Contextual Info: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total

FSD210 dip-8

Abstract: VOGT EF20 48v 2.5a charger using uc3842 12v 5a charger using uc3842 KA5H0265RC 200V Zener Diode FSD210 KA5M0380R application note KA5L0380R. Application Zener C211
Contextual Info: FPS TM Fairchild’s Power Switch Analog Discrete Interface & Logic Optoelectronics For Switch Mode Power Supply Building Block Solutions for Multi-Market Applications Across the board. Around the world FPS ™ Design Guide Table Of Contents What is Fairchild Power Switch FPS™ .5

mc7BL

Contextual Info: MC78LXXAC LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE VOLTAGE REGULATORS These regulators employ internal current-limiting and thermal-shutdown, making them essentially indestructible. If adequate heat sinking is provided, they can deliver up to 100mA output current. They are intended

Contextual Info: SAMSUNG SE MI CO ND UC TOR INC 10 ' •' MC78LXXAC SERIES • D eT| 7 ^ 4 1 4 2 • - OGD47n 3 | - LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE VOLTAGE REGULATORS These regulators employ internal current-limiting and thermat-shutdown, making them essentially indestructible. If adequate heat sinking is

Contextual Info: TMP512 TMP513 SBOS491A – JUNE 2010 – REVISED MAY 2011 www.ti.com Temperature and Power Supply System Monitors Check for Samples: TMP512, TMP513 FEATURES DESCRIPTION • • • • • • • • • • The TMP512 dual-channel and TMP513 (triple-channel) are system monitors that include

10M500

Contextual Info: TMP512 TMP513 www.ti.com SBOS491 – JUNE 2010 Temperature and Power Supply System Monitors Check for Samples: TMP512, TMP513 FEATURES DESCRIPTION • • • • • • • • • • The TMP512 dual-channel and TMP513 (triple-channel) are system monitors that include

TMP513

Abstract: Mosfet RM3
Contextual Info: TMP512 TMP513 SBOS491A – JUNE 2010 – REVISED MAY 2011 www.ti.com Temperature and Power Supply System Monitors Check for Samples: TMP512, TMP513 FEATURES DESCRIPTION • • • • • • • • • • The TMP512 dual-channel and TMP513 (triple-channel) are system monitors that include

BD12 NPN transistors

Contextual Info: TMP512 TMP513 www.ti.com SBOS491 – JUNE 2010 Temperature and Power Supply System Monitors Check for Samples: TMP512, TMP513 FEATURES DESCRIPTION • • • • • • • • • • The TMP512 dual-channel and TMP513 (triple-channel) are system monitors that include

345s

Contextual Info: TMP512 TMP513 SBOS491A – JUNE 2010 – REVISED MAY 2011 www.ti.com Temperature and Power Supply System Monitors Check for Samples: TMP512, TMP513 FEATURES DESCRIPTION • • • • • • • • • • The TMP512 dual-channel and TMP513 (triple-channel) are system monitors that include

transistor BD6

Abstract: BD12 NPN transistors TMP512 TMP513 Mosfet RM3 QFN-16 R3M marking 48 fs15 diode
Contextual Info: TMP512 TMP513 www.ti.com SBOS491 – JUNE 2010 Temperature and Power Supply System Monitors Check for Samples: TMP512, TMP513 FEATURES DESCRIPTION • • • • • • • • • • The TMP512 dual-channel and TMP513 (triple-channel) are system monitors that include