TRANSISTOR FGS Search Results

TRANSISTOR FS 10 TM

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance

BUK443-60A

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

TRANSISTOR BO 344

Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK455-400B

Contextual Info: PHILIPS INTERNATIONAL bSE J> 711002b T2b H P H I N Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: N AUER PHILIPS/DISCRETE b 'lE D bbS3T31 0030bS5 312 * A P X Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

BUK455-60A

Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Contextual Info: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUZ72

Abstract: V103 TRANSISTOR V103 F5101
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Marking Code FGs

Abstract: BSS-229 SS-229
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • Fds • /„ • • • • • 250 V 0.07 A ^ D S o n 100 i2 N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code PinC onfigu ration Marking Tape and Reel

BSS139

Abstract: kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • BSS 139 VDS ID 250 V 0.04 A -^DS on 100 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Pin C onfigu ration Marking Tape and Reel Information

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • VDS • ID BSP 135 600 V 0.100 A • -^DS on 60 • N channel • Depletion mode • High dynam ic resistance • Available grouped in FGS(m) Type Ordering Code T ap e and Reel Inform ation BSP 135 Q62702-S655

MARKING CODE AGS

Abstract: TRANSISTOR BSP 2000
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • ID Fds 240 V 0.2 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code BSP 129 Tape and Reel Information Pin Conf igura tion Marking

ss129

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • FDS 240 v • /„ 0.15 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code B S S 129 Tape and Reel Information PinC onfigu ration Marking

Marking Code FGs

Abstract: MARKING CODE AGS E6906 BSP135
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • rDS BSP 135 6oo v • /„ ® • • • • 0.100 A ^ D S o n 60 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Information Pin Conf gura tion Marking Package

8065S

Abstract: TRANSISTOR BSP 149
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSP 149 200 V 0.48 A •^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) ^D S Id • • • • Type Ordering Code B S P 149 Q67000-S071 Tape and Reel Information Pin Conf igura tion Marking

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHP65N06LT, PHB65N06LT SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

Contextual Info: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

Contextual Info: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­

MARKING 19S

Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
Contextual Info: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor buz 36

Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
Contextual Info: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values

BUZ171

Contextual Info: SIEMENS 10427 SIPMOS Power Transistor BUZ 171 • P channel • Enhancement mode • Avalanche rated Type BUZ 171 VDS -5 0 V Id -8 .0 A ^OS on 0.3 Q Package 1> Ordering Code TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 *C