TRANSISTOR FGL60N170D Search Results

TRANSISTOR FGL60N170D Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR FGL60N170D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
induction heater Abstract: transistor fgl60n170d FGL60N170D Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A	Original	FGL60N170D FGL60N170D O-264 induction heater transistor fgl60n170d	PDF
IGBT 60A 1700v Abstract: FGL60N170D FGL60N170DTU transistor fgl60n170d Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A	Original	FGL60N170D FGL60N170D O-264 FGL60N170DTU O-264 IGBT 60A 1700v transistor fgl60n170d	PDF
FGL60N170D Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A	Original	FGL60N170D FGL60N170D O-264	PDF
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original		PDF
thermistor KSD201 Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd	PDF