TRANSISTOR FET N-CHANNEL RF AMPLIFIER Search Results

MRF255 equivalent

Abstract: electrolytic capacitor 470 mrf255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

MRF255 equivalent

Abstract: mrf255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

SU 179 transistor

Abstract: s227
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­

sp 0937

Abstract: VK200 inductor of high frequencies Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

zener diode 7c3

Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Contextual Info: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

MRF966

Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Contextual Info: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

100B100JW500X

Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

motorola 304

Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Contextual Info: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier

MRF255 equivalent

Abstract: MRF255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and industrial applications at frequencies

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

CDM 82

Contextual Info: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

equivalent transistor 2sk

Abstract: 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk
Contextual Info: Ordering number: ENN7021 | TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET _FC21 SANYO/ High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features • T h e F C 2 l contains both a 2SK 1740 equivalent chip

Case 449-02

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9745T1 The RF Small Signal Line Silicon L ateral FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable

CDM 03

Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A
Contextual Info: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J600 transistor

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR19030XF

Abstract: 100B100JCA500X AGR19030EF JESD22-C101A
Contextual Info: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR19180EF

Abstract: JESD22-A114 Z111A
Contextual Info: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—