TRANSISTOR F5 Search Results

Contextual Info: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: TRANSISTOR M O D U L E three phases bridge type QF50AA40/60 Q F 50A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)

RN1901FS

Abstract: RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

RN1903FS

Abstract: RN1902FS RN1901FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Di 762 transistor

Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System

Contextual Info: fl SIGNETICS INTEGRATED CIRCUITS 54H00 Series 74H00 Series The 54H00/74H00 logic family is high speed TTL III. These transistor-transistor logic circuits were designed for general purpose applications. They have good external noise immunity and high fan-out.

CDFP4-F16

Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The

c380 NPN transistor

Abstract: c380 transistor DATASHEET OF BJT 547 transistor c380 kf 202 transistor BTC5096WC3 90E09 4538 equivalent Transistor 0235 BF K 4014 transistor
Contextual Info: CYStech Electronics Corp. Spec. No. : C212WC3 Issued Date : 2003.08.15 Revised Date : Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5096WC3 Description The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and

c380 NPN transistor

Abstract: c380 transistor ff 0401 transistor TT 2076 transistor transistor marking code ne SOT-23 transistor c380 diode gp 934 sot-23 MARKING CODE 431 BTC5094N3 hfe 4538
Contextual Info: CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and

LTF5022-4R7-LC

Abstract: XC9128B45 ltf5022 LTF5022-LC AEN 6 XC9128 CDRH4D28C-4R7N LTF5022T-4R7N2R0 LMK212BJ106KG MSOP-10
Contextual Info: XC9128/XC9129 Series ETR0411-009 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a

c380 NPN transistor

Abstract: TT 2076 TT 2076 transistor 4014 bp DATASHEET OF BJT 547 transistor c380 c380 transistor RE101 BTC5095S3 4447 surface mounted diode
Contextual Info: CYStech Electronics Corp. Spec. No. : C212S3 Issued Date : 2003.08.15 Revised Date : Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5095S3 Description The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and

c380 NPN transistor

Abstract: c380 npn HSC5094 FC 0137 transistor marking code ne SOT-23 rbm 5018 4.7-16 4447 surface mounted diode c380 transistor TR10E
Contextual Info: HI-SINCERITY Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band.

BFP620 acs

Abstract: BFP620 s parameters 4ghz
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

acs sot-343

Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

Contextual Info: D N AMER P H IL IP S /D IS C R E T E • bb53=i31 D 0 3 0 b 5 0 B3Q « A P X Philips Sem iconductors Product Specification Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

D2318

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

transistor d2118

Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage