TRANSISTOR F1 Search Results

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

transistor f1

Abstract: 2SC930C 2SC930 NPN planar RF transistor 36PS
Contextual Info: ST 2SC930C1…F1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into four groups C1, D1, E1 and F1, according to its DC current gain. On special request, these transistors can be

BD443

Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

Philips polystyrene capacitors

Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB

transistor f1

Abstract: 2SC930C NPN planar RF transistor 2SC930 36PS
Contextual Info: ST 2SC930C1…F1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into four groups C1, D1, E1 and F1, according to its DC current gain. On special request, these transistors can be

BU406 SGS

Abstract: china tv schematic diagram BU406 transistor BU406
Contextual Info: BU406 SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV ■ 3 1 DESCRIPTION The BU406 is a silicon epitaxial planar NPN transistor in Jedec TO-220 plastic package.

blf878

Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
Contextual Info: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from

BLF872

Abstract: ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP
Contextual Info: BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The

BLF871

Abstract: 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871
Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

Contextual Info: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is

BLF177

Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION

philips ferrite material specifications

Abstract: BD239 BY239 LXE15450X SC15 mlc444
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

erie feedthrough capacitors

Abstract: philips catalog potentiometer 5130 BDT85 IN4148 LXE16350X SC15 MCD621 6/erie 1250-003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE16350X NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

BLF1043

Abstract: SOT538
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Preliminary specification 2001 Jan 23 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • High power gain

33 GP

Abstract: BLF2045 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION

BLF2043F

Abstract: BP317 enamelled copper wire
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION

BLF1046

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION

BLF861

Abstract: BLF861A UT70 821 ceramic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION

equivalent of SL 100 NPN Transistor

Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA

BLF2022-70

Abstract: BLF2047 ACPR10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain

2STP535

Abstract: ST DARLINGTON TRANSISTOR 2STP535FP alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic
Contextual Info: 2STP535FP NPN power Darlington transistor Features • Monolithic Darlington transistor with integrated antiparallel collector-emitter diode ■ Very high DC current gain Applications ■ Electronic ignition ■ AC-DC motor control ■ Alternator regulator