TRANSISTOR F 948 Search Results

transistor MWTA 06

Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
Contextual Info: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %

Contextual Info: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors

d634

Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
Contextual Info: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector

irf 739 mosfet

Abstract: IRF 740 PD-94837
Contextual Info: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple

transistor f 948

Abstract: TRANSISTOR bdp 948 sot 223 marking code 4c TRansistor A 950 siemens sot223 C4217
Contextual Info: SIEMENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low cotiector-emitter saturation voltage BDP 948 BDP 948 Q62702-D1336 1=B o CO BDP 950 BDP 950 Q62702-D1338 1= B 2=C CO

Contextual Info: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple

947 transistor

Contextual Info: BDP 947, BDP 949 Silicon NPN Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 948, BDP 950 PNP 2 1 Pin Configuration VPS05163 Type

transistor f 948

Abstract: TRANSISTOR bdp 948 BDP947 BDP949 Q62702-D1336 Q62702-D1338 f 948
Contextual Info: BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 NPN Type Marking Ordering Code Pin Configuration

Contextual Info: PD- 94828 IRF740APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRFB11N50A

Abstract: IRFI840G
Contextual Info: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

FSEM30

Abstract: BFR360F TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

Contextual Info: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency

transistor c 6073

Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
Contextual Info: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures

Contextual Info: PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRFB11N50A

Abstract: IRFI840G 4.5V to 100V input regulator
Contextual Info: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRG4PC50wpbf

Abstract: 035H IRFPE30
Contextual Info: PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

Contextual Info: PD - 94838 SMPS MOSFET IRFIB6N60APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple

HTL LOGIC

Abstract: analog plc sensor wiring diagram LIMIT SWITCH namur application mcr-f-ui-dc Wiring Diagram RPM module Turbine Flow meter Proximity Sensor 4-20 out incremental encoders htl "zero speed" namur magnetic pickup speed sensor
Contextual Info: Programmable Universal Frequency Transducer Data Sheet 1140A April 2000 Features • Completely programmable frequency range from 0.1 Hz…120 kHz programmed using membrane keypad • LCD to display the input or output signals • 3-way isolation of signals ( input, output and power

M948

Abstract: Teltone M-949 948100 M-948 ir 948 d teltone m949 TELTONE m-948
Contextual Info: \ \ M-948 DTMF RECEIVER Features Description • • • • • • • • • The Teltone M-948 combines switched-capacitor and digi­ tal techniques to decode Dual-tone Multifrequency DTMF and rotary dial signals to four-bit binary data. No prefiltering

Contextual Info: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRFB11N50A

Abstract: IRFI840G 4.5v to 100v input regulator
Contextual Info: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRF1010

Contextual Info: PD- 94820 IRF830APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic