2SK458
Abstract: 2SK45
Contextual Info: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C
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2sk4582sk45 |
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2SA1626
Abstract: S0532 TRANSISTOR BO 346 X108 TIA03
Contextual Info: NEC À Silicon Transistor 2SA1626 PNP ¡S& ÉL Sil i E X -f "J *f-> *f PN P Silicon Triple Diffused Transistor High Speed High Voltage Switching ft ftw m m o PtjÉJ'E'C-to V Ceo = — 400 V o x ^ y f > ^ " X : mm 7.0 M A X . b°— tf<0.7 /US T a = 25 ° C )
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pws10247-lij22-lil24-lil+1022-fl29-jt27-tet29-itijulft26-ffl2sa1626s0532transistor bo 346x108tia03
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bi 370 transistor
Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
Contextual Info: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o
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cycles50sc-43bbi 370 transistorjni corporation+4aa1a4pbi 370 transistor epa33nec j
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tf 044
Abstract: 2SK490 JE 33 HT - 0886 b0236 HT 0886
Contextual Info: HEC j M O S Field Effect P ow er Transistor _ 2SK490 N - ^ * ; i ^ N 0r7 - M O S FET i i f f l N-Channel M OS Field Effect Power Transistor Switching Industrial Use 2SK490ii, N f - M O S FET W B 0 / P A C K A G E D IM EN SION S Unit: mm < , 4 X -y - f - >
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2sk490cycles50tf 044je 33+3ht - 0886b0236ht 0886
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transistor et 454
Abstract: 2sk542 DC-DC H14 F530 T108 T460
Contextual Info: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS
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2sk542transistor et 454dc-dc h14f530+2t108t460
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JE 800 transistor
Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )
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upa76haje 800 transistorupa76pa76ha+6kje transistorpa76hje 33kje 17 transistorb0188361-s
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UPA79C
Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ
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upa79cpa79cupa79til 31a+6ra8040js 2204hfe 4538w0422vtc 082j2/js 2204
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upa74ha
Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )
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upa74haupa74pa74hgw 348+2pa74hak 2445 transistor
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2SA1612
Contextual Info: NEC j > y = l > Y = ÿ > i > 7 . 9 Silicon Transistor 2 S A 1 6 1 2 PNP Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier mm; 7" 1J V KICffl £ L T f t S T f „ o M 'h m f t -m v h O, 2 . 1 ± 0. 1 1 .2 5 ± 0 . 1 O h FE : 500 T Y P . I c = — 1 . 0
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2sa16122sc41801sc-70 |
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2SA1396
Abstract: 2SC3568 T108 TS33
Contextual Info: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS
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2sa13962sc3568fifo988t108+1ts33
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2SC2719
Abstract: pt 2313 3l-5063 cdb 413 h044 IC 566 vco 05S2 PA33 TS33 3L50
Contextual Info: > > i; 3 n y > i f z . 9 Silicon Transistor N P N X . k ' f + Z 'T J U m S s fJ 3 > Y ' 9 > i > 7 > 9 NPN Silicon Epitaxial Transistor High Frequency Amplifier, Medium Speed Switching Industrial Use 5 .2 P O 2 S A — 600 t 1 1 5 2 ¿ m W 3 > V CEo = y /
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02sa1152sc-43bpws103l-5063+92sc2719pt 2313cdb 413h044ic 566 vco05s2pa33ts333l50
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2SK872
Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss
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2sk872irf 545transistor b 772 pupc1100+3tle 6299 rmfe 521261717
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2SK659
Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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2sk659tc-6071 |
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TC-6201
Abstract: 2SK787 T460 L083S1213T AMC1085-3.3T
Contextual Info: MOS M O S Field Effect Pow er Transistor — MOS F E T x > r " s * > 7 ' m x i f f l 2 S K 787 Ü , + M O S F E T T* ^ > ÎS fiï*s'fS < , X -1* •/ -f- > ¥ i ì : mm & f) , rgjloJiSX 'f >yf <t> 3.2 + 0.2 4.7 MAX. 15.7 MAX. y o rn ili, m 1. 5 3 D c -D c
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2sk787tc-6201t460l083s1213t+1amc1085-3.3t
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2SJ153
Contextual Info: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,
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2sj153 |
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2SK853
Abstract: 2SK853A 2SK85 L0722
Contextual Info: SEC Junction Field Effect Transistors 2 S K 8 5 3 .8 5 3 A ¡ a & * ts , i& m » * * ♦ § « N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier, Audio Frequency Amplifier f t : mm f t O ftß jfö ig ia . 7 t D / x f / f . I T
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2sk8532sk853at109082sk85+1l0722
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RM4T
Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Contextual Info: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ
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2sk800rm4tr460 fetlg lx 221+3tc6142b0992tt 22
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TRANSISTOR BJ 033
Abstract: 2SB1068 JAN 5751 m5ss
Contextual Info: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm
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2sb1068o2sd15131pws10transistor bj 033+2jan 5751m5ss
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2SK1149
Abstract: transistor sb 772
Contextual Info: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C
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2sk1149transistor sb 772 |
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2SK470
Abstract: 2sk47 btt4
Contextual Info: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —
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2sk470pws102sk47btt4 |
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r460 FET
Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
Contextual Info: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o
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2sk78632-fs27l-tt29-jtftw+11354-fi26-slir460 fettt 6222-1tt 6222tc-6222transistor gr 346l0623ir 8115n02453e transistor
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2SK1132
Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
Contextual Info: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4
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2sj1652sk1132transistor dg s-10ifr 641+1tc-7517b
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FZ 300 R 06 KL
Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
Contextual Info: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O
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upa1603fz 300 r 06 klpa1603transistor np 3773+5transistor phl 641pa1603cxl0734is352l 0734
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2sk991
Abstract: 2SK9 ASGA 2sk99
Contextual Info: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f
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2sk9912sk9asga2sk99 |
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