TRANSISTOR EQUIVALENT TYPE Search Results

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)

2SC5376F

Abstract: HN7G10FE SSM3K03FE 2sC537
Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

HN7G02FE

Abstract: RN2110 SSM3K03FE
Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent

Power MOSFET, toshiba

Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

HN7G02FE

Abstract: RN2110 SSM3K03FE On semiconductor power MOSFET reliability report
Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent

HN7G09FE

Abstract: RN1104F SSM3K15FS
Contextual Info: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent

Contextual Info: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

HN7G02FU

Abstract: 2SK1830 RN2110 2SK183
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SA1955

Abstract: HN7G03FU SSM3K04FU
Contextual Info: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: HN7G03FU SSM3K04FU
Contextual Info: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES 5 6 * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ 1 EQUIVALENT CIRCUIT 3 2 R1

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 6 5 R1 4 R2

ud3k

Abstract: DTC114E DTA114E dual digital transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 3 2 R1 1 R2

DTA144E

Abstract: DTC144E dual digital transistor UD12K
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 6 5 R1 4 R2