TRANSISTOR EQUIVALENT TABLE Search Results

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

STC04IE170HV

Abstract: C04IE170HV JESD97 2a 280
Contextual Info: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

STC04IE170HP

Abstract: C04IE170HP JESD97
Contextual Info: STC04IE170HP Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

TO247-4L

Abstract: C20DE90HV JESD97 STC20DE90HV DC DC converter 1A 400V TO 220 Package SMPS forward
Contextual Info: STC20DE90HV Hybrid emitter switched bipolar transistor ESBT 900 V - 20 A - 0.06 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1.2 V 20 A 0.06 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■

MOSFET 1200v 3a

Abstract: C03DE170HV JESD97 STC03DE170HV
Contextual Info: STC03DE170HV Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1V 1.8A 0.55Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700 V

mosfet 1500v

Abstract: BA157 C08DE150HV JESD97 STC08DE150HV mosfet 1500v for smps bipolar transistor 1500v
Contextual Info: STC08DE150HV Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

2200V High voltage emitter switched bipolar transistor

Abstract: C03DE220HV JESD97 STC03DE220HV emitter switched bipolar transistor
Contextual Info: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1V 3A 0.33Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω

Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

HV cascode smps

Abstract: C06IE170HV JESD97 STC06IE170HV
Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

emitter switched bipolar transistor

Abstract: STC03DE170HV BA157 C03DE170HV
Contextual Info: STC03DE170HV HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features n n n n VCS ON IC RCS(ON) 1V 1.8 A 0.55 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V

P12IE95F4

Abstract: STP12IE95F4 JESD97
Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

C08IE150HV

Abstract: JESD97 STC08IE150HV ESBT
Contextual Info: STC08IE150HV Emitter Switched Bipolar Transistor ESBT 1500 V - 8 A - 0.10 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

JESD97

Abstract: STE50DE100
Contextual Info: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

BLF6G20

Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752
Contextual Info: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

transistor d 1302

Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

C4532X7R1E475M

Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
Contextual Info: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

H31D

Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
Contextual Info: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

cs601

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit and Package Description Absolute Maximum Ratings Truth Table Recommended Operating Conditions Electrical Characteristics

2360d

Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
Contextual Info: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

transistor 9575

Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

RF35

Contextual Info: BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

Contextual Info: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.