TRANSISTOR EQUIVALENT PROGRAMM Search Results

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

150a gto

Abstract: QS 100 NPN Transistor 200H KSC5603D
Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

j5304d

Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
Contextual Info: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

j5304d

Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Contextual Info: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

Contextual Info: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit

FJP9100

Abstract: NPN Transistor 600V TO-220
Contextual Info: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit

J9100

Contextual Info: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit

Contextual Info: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220

Contextual Info: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220

Contextual Info: FJV3110R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit • Built-in Bias Resistor R = 10 kΩ • Complement to FJV4110R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit

Contextual Info: FJV3115R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit

Contextual Info: FJV3115R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit

Contextual Info: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit

Contextual Info: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit

BDX53 equivalent

Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
Contextual Info: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit

BDX53 equivalent

Abstract: bdx53c equivalent
Contextual Info: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit

TIP127

Abstract: TIP127 circuit TIP126 TIP125 TIP127 equivalent tip127 darlington equivalent of TIP125 tip127 fairchild complementary darlington TIP126 circuit
Contextual Info: TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP120/121/122 Equivalent Circuit C B TO-220 1 R1 1.Base 2.Collector Absolute Maximum Ratings* Symbol VCBO VCEO 3.Emitter R1 @ 8kW

FJY3009R

Abstract: FJY4009R
Contextual Info: FJY3009R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY4009R Equivalent Circuit C C S09 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3011R

Abstract: FJY4011R
Contextual Info: FJY3011R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=22KΩ • Complement to FJY4011R Equivalent Circuit C C S11 E B E B SOT - 523F Absolute Maximum Ratings *

TIP147

Abstract: tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14
Contextual Info: TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142 Equivalent Circuit

J5502

Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

495220

Abstract: linear application
Contextual Info: 495220 NPN Epitaxial Silicon Darlington Transistor High Voltage & Medium Power Linear Application Equivalent Circuit C B TO-220 Marking : 495220 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted Parameter Value

Contextual Info: KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor • • • • • • 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application

j5304d

Abstract: transistor j5304d j5304
Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor Features • • • • • Equivalent Circuit High-Voltage, High-Speed Power Switch Applications Wide Safe Operating Area Built-in Free-Wheeling diode Suitable for Electronic Ballast Applications Small Variance in Storage Time