TRANSISTOR EQUAL Search Results
TRANSISTOR EQUAL Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
|
||
| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
|
||
| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
|
||
| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
|
||
| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
|
TRANSISTOR EQUAL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
transistor sc 308
Abstract: DTA143EE SMD310
|
Original |
dta143ee416/scr14525dta143ee/d+2 | |
DTC114TE
Abstract: SMD310 motorola DTC114TE
|
Original |
dtc114te/ddtc114te416/scsmd310+1 | |
transistor sc 308
Abstract: DTC114TE SMD310
|
Original |
dtc114te416/scr14525dtc114te/d+2 | |
DTC114YE
Abstract: SMD310 motorola DTC114YE
|
Original |
dtc114ye/ddtc114ye416/scsmd310+1 | |
DTA143EE
Abstract: SMD310 43 DTA143EE
|
Original |
dta143ee/ddta143ee416/scsmd310+1 | |
DTA114YE
Abstract: SMD310
|
Original |
dta114ye/ddta114ye416/scsmd310 | |
88 diode
Abstract: NUS2501W6T1 sot-363 Marking LG
|
Original |
nus2501w6sc-88nus2501w6/d88 diode+2 | |
transistor sc 308
Abstract: DTC114YE SMD310
|
Original |
dtc114ye416/scr14525dtc114ye/d+2 | |
transistor sc 308
Abstract: DTA114YE SMD310
|
Original |
dta114ye416/scr14525dta114ye/d+2 | |
|
Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to |
Original |
nsm11156dw6t1gsc-88/sot-363nsm11156dw6/d | |
419B-02
Abstract: NSM11156DW6T1G marking .544 sot363
|
Original |
nsm11156dw6t1gsc-88/sot-363nsm11156dw6/d419b-02+1 | |
|
Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to |
Original |
nsm46211dw6t1gsc-88/sot-363nsm46211dw6/d | |
N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
|
Original |
nsm46211dw6t1gsc-88/sot-363nsm46211dw6/dn5 npn transistor+3 | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
|
OCR Scan |
an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+7 | |
|
|
|||
BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
|
Original |
bu323apr14525bu323ap/dbc337 rbe+5 | |
419B-02
Abstract: NSM21356DW6T1G SC marking code NPN transistor
|
Original |
nsm21356dw6t1gsc-88/sot-363nsm21356dw6/d419b-02+1 | |
419B-02
Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
|
Original |
nsm21156dw6t1gsc-88/sot-363nsm21156dw6/d419b-02+2 | |
|
Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
Original |
nsm21156dw6t1gsc-88/sot-363nsm21156dw6/d | |
|
Contextual Info: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
Original |
nsm21356dw6t1gsc-88/sot-363nsm21356dw6/d | |
|
Contextual Info: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A |
Original |
zxtc4591amczxtd4591am832d-81541 | |
NSB1706DMW5T1GContextual Info: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
Original |
nsb1706dmw5t1gsc-88ansb1706dmw5t1/d | |
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: S11A1 Glossary of Microwave Transistor Terminology
|
Original |
5966-3085ehigh-frequency pnp and npn transistors with transition frequencies above 5 ghz and 9 ghzs11a1glossary of microwave transistor terminology | |
|
Contextual Info: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
Original |
nsb1706dmw5t1gnsvb1706dmw5t1gsc-88ansb1706dmw5t1/d | |
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: Glossary of Microwave Transistor Terminology
|
Original |
5966-3085ehigh-frequency pnp and npn transistors with transition frequencies above 5 ghz and 9 ghzglossary of microwave transistor terminology | |