TRANSISTOR DV4 Search Results

2SD596A

Abstract: transistor DV3 D1788 2SB624
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)

2SD596

Abstract: transistor dv4 2SB624
Contextual Info: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA

2SD596 dv3

Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
Contextual Info: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA

transistor DV3

Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.

2SD596

Abstract: D1298 SSA250 transistor dv4
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.

D 596

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SD 596 ELECTRON DEVICE / AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD D E S C R IP TIO N PACKAG E D IM E N S IO N S The 2S D 596 is designed fo r use in small type equipm ents especially recom ­

05G433

Contextual Info: A L L E GR O M C R O S Y S T E M S INC S3 » • 05Ü4338 OODSbbS HALGR T - ^ l- o l PROCESS BXE Process BXE PNP Small-Signal Transistor Process BXE is a double-diffused PNP epitaxial planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its

2SD596

Contextual Info: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

transistor dv4

Abstract: 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7

transistor dv4

Abstract: transistor DV3 2SD596 DV4 sot23
Contextual Info: 2SD596 SOT-23 Transistor NPN SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SD596

Abstract: 2S8624 2S0806
Contextual Info: 2SD596.2SD596R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2S8624, 2SB624R PACKAGE DIMENSIONS • High DC Current Gain: h FE - 200 TYP. <VCE-1 .0 V , l c - 100mA in m illim a ttrt inches) ¿5 g) (0.098) 0.5 '% îl (0 02)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor dv4

Abstract: 2SD596 10MHZ 2SB624
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor dv4

Abstract: transistor DV3 2SD596 SOT23-3L
Contextual Info: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

A13 transistor

Contextual Info: L _ . , . AL L E G R O M I C R O S Y S T E M S INC T3 » • 0504330 0003^5 7 ■ AL6R T-91-01 PROCESS FEE Process FEE NPN Small-Signal Transistor The F E E Process results in double-diffused silicon

SEIKO

Abstract: cmos SENSOR 15um 8 pin IC 1038 ic 0808 pin diagram PHOTO SCS seiko 64 s chip
Contextual Info: S-8603AWI rev.1.01 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR

The S-8603AWI is a suitable linear image sensor for a multichip-type contact image sensor with a resolution of 8 dots per mm. This IC integrates a 64dots photo-transistor array and a CMOS scanning circuit.

transistor dv4

Abstract: marking DV4 2SD596 2SD596 dv3
Contextual Info: 2SD596 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.7 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. 92¡ À0. 05

8 pin IC 1038

Abstract: s 8603 contact image sensor cmos SENSOR 15um ic 7940 Datasheet line Sencer IC Sencer IC 74HC4066 AD843 S-8603AWI
Contextual Info: Rev.1.0_20 S-8603 AWI LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR The S-8603AWI is a suitable linear image sensor for a multichip-type contact image sensor with a resolution of 8 dots per mm. This IC integrates a 64 dots photo-transistor array and a CMOS scanning circuit. Picture signals are

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

LZ2324J

Contextual Info: LZ2324J LZ2324J 1/3 type B/W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION LZ2324J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 320000 pixels (horizontal 542 x vertical

"CCDs,Charge Coupled Devices"

Abstract: LZ2336 4h16 Smr 220
Contextual Info: LZ2336 Two-power supply +5 V and +12 V operation 1 / 3 type B/W CCD Area Sensor for EIA LZ2336 PIN CONNECTIONS DESCRIPTION U2336 is a 1 /3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices) driven by only

LZ2124

Abstract: LZ2124J 124J 20-PIN LR36683N
Contextual Info: LZ2124J LZ2124J 1/2 type B/W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION LZ2124J is 1/2-type 8.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 320000 pixels (horizontal 542 x vertical