TRANSISTOR DK Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

BFG135 amplifier

Abstract: BFG135 BFG135 - BFG135 MBB300
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor

marking dk sot-89

Abstract: 2SC4672L-AB3-R dk SOT89 2SC4672 UM MARKING SOT89 transistor dk 50 2SC4672-AB3-R dk SOT-89 SOT-89 marking DK marking DK sot89
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC4672 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION 1 The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at

dk marking code sot-89

Abstract: dk qw transistor dk 50 dk qw TRANSISTOR marking dk sot-89 2sc4672 marking Marking Code ES SOT-89 2SC4672 dk transistor 2SC4672G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low saturation voltage, typically VCE(SAT)=0.1V at

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

BUJ103AX

Abstract: BP317 BU1706AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

BP317

Abstract: BU1706AX BUJ204AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

BUJ204A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

transistor dk 50

Abstract: transistor dk transistor 2SC4672 dk transistor
Contextual Info: UTC 2SC4672 TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. 1 FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at IC / IB=1A / 50mA *Excellent DC current gain characteristics

transistor dk 50

Abstract: dk transistor 2sc4672 marking dk qw 2SC4672 transistor dk sot-89 marking marking dk sot-89 marking DK dK SOT89
Contextual Info: UTC 2SC4672 TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. 1 FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at IC / IB=1A / 50mA *Excellent DC current gain characteristics

MB87S

Contextual Info: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.

DK 53 code transistor

Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS

Philips FA 145

Abstract: BFQ17 lem HA dK SOT89
Contextual Info: DK. ^ . • P hilips Sem iconductors N A U ER LbSBTai 002505S SflS H I A P X PHILIPS/DISCRETE b 7E NPN 1 GHz wideband transistor DESCRIPTION Product specification D £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The

PDTA124XE

Abstract: PDTC124
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES

PHC20306

Abstract: BP317 MS-012AA MAM118
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under Discrete Semiconductors, SC08b Philips Semiconductors 1997 Oct 14 PHILIPS Philips Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A

Philips electrolytic 106 screw

Abstract: STR aluminium electrolytic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y

sot416 marking code 26

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES

PDTC143XE

Abstract: PDTA143XE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES

TSP 817

Abstract: BUK9830-30 PHT6N03LT
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES

BC337

Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor

PDTC123ET

Abstract: PDTA123ET
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET