TRANSISTOR DI 556 Search Results

transistor BF 697

Abstract: BSV52 BF 273 transistor
Contextual Info: > <0 ID . Di scret e POW ER & Sig n a l Technologies National Semiconductor" BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m A to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2

transistor BF 697

Abstract: BF 273 transistor transistor l81
Contextual Info: BSV52 . Æ ^Æ N a t i o n a l Di scret e POWER & Signal Technologies Semiconductor BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m Ato 100 mA. Sourced from Process 21. Absolute Maximum Ratings*

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)

matsushita Transistor hFE CLASSIFICATION Marking

Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
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2N6786U

Contextual Info: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru

IRFE210

Abstract: JANTX2N6784U JANTXV2N6784U
Contextual Info: Provisional Data Sheet No. PD - 9.1722 IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 200Volt, 1.5Ω Product Summary The leadless chip carrier LCC package represents

2N6782U

Abstract: IRFE110 JANTX2N6782U JANTXV2N6782U "TO-39 package"
Contextual Info: PD - 9.1699A IRFE110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 100Volt, 0.60Ω Product Summary The leadless chip carrier LCC package represents the logical next step in the continual evolution of

2N6786

Abstract: 2n6782 2N6784 JANTX MOSFET 2N6782 2N6782 JANTX DD 127 D transistor 2N6782 equivalent
Contextual Info: 2N6782, 2N6784 and 2N6786 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low

Contextual Info: Provisional Data Sheet No. PD - 9.1722 International IOR Rectifier IRFE210 dv/dt R A TED J ANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF: M IL-PRF-19500/556] R E P E T IT IV E A VA LA N CH E A N D N -C H A N N E L 200Volt, 1.512, HEXFET Product Summary

DD 127 D TRANSISTOR

Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

Contextual Info: PD - 9.1699A International IOR Rectifier ir f e u o dv/dt R A T E D JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L Product Summary 100Volt, 0.60Î2, HEXFET The leadless chip carrier LCC package represents

high power 400Volt mosfet transistor

Abstract: IRFE310 JANTX2N6786U JANTXV2N6786U
Contextual Info: PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U HEXFET TRANSISTOR JANTXV2N6786U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 400Volt, 3.6Ω Product Summary The leadless chip carrier LCC package represents the logical next step in the continual evolution of

Contextual Info: Provisional Data Sheet No. PD - 9.1722 International IQ R Rectifier IRFE210 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N -C H A N N E L 200Volt, 1.5Q, HEXFET Product Summary T he le ad less chip c a rrie r LC C p a cka g e re p re se n ts

Contextual Info: Provisional Data Sheet No. PD - 9.1699 International IO R Rectifier ir f e h o JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED N -C H A N N E L Product Summary 100V olt,0.60ii, HEXFET

Power Semiconductor Applications Philips Semiconductors

Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
Contextual Info: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition

transistor di 556

Abstract: SGSP477
Contextual Info: T SGS-THOMSON ^7# MÊfôimiiËïrMMÊI SGSP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on SGSP477 200 V 0.17 fi Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

D2080

Abstract: SGSP477
Contextual Info: SGS-TUOMSON SGSP477 llö » [ a i g ir C M O ( g § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 V dss 200 V ^DS(on 0.17 n •d 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

SGSP477

Abstract: bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit
Contextual Info: f Z 7 SGS-THOMSON s6 s - th o m s o n ^7# SG SP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 VDss 200 V ^D S on 0.17 ß b 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

74a diode

Contextual Info: 2N6782LCC4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on)

Contextual Info: IRFE130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V

VQE 23 E

Abstract: MG1200V1US51
Contextual Info: TOSHIBA MG1200V1US51 TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT M G 1 2 0 0 V 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES • High Input Impedance • Enhancement Mode • Electrodes are isolated from case. EQUIVALENT CIRCUIT

74a diode

Abstract: IRFE130
Contextual Info: IRFE130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V