TRANSISTOR DF- RT Search Results

marking 68g

Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

marking 68g

Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

TRANSISTOR REPLACEMENT GUIDE

Abstract: PC-17K1 PC17K1 transistor DF 50 bf replacement transistor kpc744 k4n35 pc 17k1 bd bf K3610
Contextual Info: LUMEX OPT O/ CO MP ONEN TS INC 2TE D Sblblia GOOObSb 7 r-m-ÿ 3 Photo Couplers H Y B R ID A S S E M B L IE S A P P L IC A T IO N : Is o la to r/Im p e d a n c e c o n v e rte r N o ise S u p p re s so r GUIDE TO SPECIFICATION TRANSISTOR OUTPUT TYPE PACKAGE

bu2727d

Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

BU2708AF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current

Contextual Info: m ULN2803/ULN2804 High-Voltage, High-Current Darlington Arrays 'Semiconductor PBSCRIPTIOK 1 rT>he ULN2803/2804 series are high-voltage, high-current pairs. All units feature integral clamp diodes for switching darington arrays comprised of eight NPN darington

BU2708DX

Abstract: transistor 45 f 122 BU2708D IBM REV 2.8 BU2708AF BU2708 BU2708DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to

BU2708AF

Abstract: BU2708DF transistor 45 f 122
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to

IB0810M12

Abstract: transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M
Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

tegra 2

Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
Contextual Info: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

marking 5

Abstract: transistor Common Base configuration diode MARKING F3 transistor DF 50 4620 NT 101 PW 1.5 IB2729M90
Contextual Info: Part Number: Integra IB2729M90 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high f T The high power pulsed radar transistor part number IB2729M90 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C