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    PBSS5230PAP Search Results

    PBSS5230PAP Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PBSS5230PAP,115
    		NXP Semiconductors PBSS5230PAP - PBSS5230PAP - 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor Original PDF 270.98KB 17
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    PBSS5230PAP Price and Stock

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    Nexperia PBSS5230PAP,115

    Bipolar Transistors - BJT TRANS-SS PNP/PNP SOT1118 30V
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    Mouser Electronics PBSS5230PAP,115 3,476
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    Verical () PBSS5230PAP,115 18,000 843
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    PBSS5230PAP,115 6,000 843
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    PBSS5230PAP,115 2,148 843
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    TTI PBSS5230PAP,115 Reel 6,000
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    NXP Semiconductors PBSS5230PAP,115

    Trans GP BJT PNP 30V 2A 200mW Automotive 6-Pin HUSON EP T/R
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    Verical PBSS5230PAP,115 5,000 843
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    Nexperia PBSS5230PAP-QX

    Bipolar Transistors - BJT SOT1118/HUSON6 PNP/PNP TRANS
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    TTI PBSS5230PAP-QX Reel 6,000
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    PBSS5230PAP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS5230PAP DFN2020-6 OT1118) PBSS4230PANP. PBSS4230PAN. AEC-Q101 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    NPN TRANSISTOR SMD MARKING CODE B2

    Abstract: DFN2020-6
    Contextual Info: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4230PAN DFN2020-6 OT1118) PBSS4230PANP. PBSS5230PAP. AEC-Q101 NPN TRANSISTOR SMD MARKING CODE B2 DFN2020-6 PDF

    smd transistor marking 2J

    Contextual Info: PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4230PANP DFN2020-6 OT1118) PBSS4230PAN. PBSS5230PAP. AEC-Q101 smd transistor marking 2J PDF