TRANSISTOR DF- RO Search Results

TRANSISTOR SMD MARKING CODE B7t

Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
Contextual Info: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated

Contextual Info: "34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC MICRO-T continued dF J b3t,7ES5 (DIODES/OPTO) 34C CI03a202 38202 D r - 5f- n MMT74 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low-noise amplifier, oscillator and mixer applications. TOP

TRANSISTOR 7059

Abstract: AN562 SD1565
Contextual Info: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).

fr diode

Abstract: DIODE JS.6 P-T0251
Contextual Info: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V

BUZ 21 SMD

Contextual Info: SIEMENS BUZ 103 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-22O SMD available Type Vfcs b ^% S on) Package Ordering Code BUZ 103 50 V

book FOR D 1047

Contextual Info: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated

Contextual Info: TT TOSHIBA {DIS CR ETE/ OP TO} 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T V E S O DDlbbSb 99D 16656 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 5 8 SILICON N CHANNEL MOS TYPE (7T-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

2SK790

Abstract: HSO16 2SK79 1SV35
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS

Contextual Info: h ~7 > V X £ / T ransistors 2 S D 1 7 6 2 2SD1762 x t f ^ df ' > 7 ; u 7 0 u - ^ N P N '> u = i> h 7 > y x ^ 1£J§>J$! :fr*i,lif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • W f^ & H /D im e n s io n s U n it: mm v*>JV;V'J| -r

OPTO-34

Contextual Info: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 <DIODES/OPTO MMCF2906, MMCF2906A MMCF2907, MMCF2907A dF | b3b725S 34C SILICON) 38185 ^ ^ DD3Û1ÔS D ^ FLIP -C H IP PIMP S W ITC H A N D A M P L IF IE R T R A N S IS T O R S F lip 'C h ip — General purpose P N P sw itching and a m p lifie r transistor

transistor lt 6229

Abstract: D239 TRANSISTOR Transistor ml5 similar 5100H
Contextual Info: MSS0306 M OSEL VITELIC 3" VOICE ROM Features • Single power supply can operate at 2.4V through 4.5V. ■ Current output can drive 8 ohm speaker with a transistor. ■ The voice content is stored up to 3.5 seconds 5100h and can be separated to 8 sections.

2SD1898

Abstract: 100MHZ
Contextual Info: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B

musical bell

Abstract: rhythm UM66T UM66T68L UM66* melody generator door bell ic UM66T Series UM66T19L UM66T32L UM66T05L
Contextual Info: UM66TXXL LINEARINTEGRATED CIRCUIT MELODY INTEGRATED CIRCUIT DESCRIPTION The Contek UM66TXXL series are CMOS LSI designed for using in door bell, telephone and toy application. It is an on-chip ROM programmed for musical performance. Produced by CMOS technology, the device results in very low power

LX8580A

Abstract: LX8580A-00CDD LX8580A-00CDDT LX8580A-00CDF LX8580A-00CP LX8584
Contextual Info: LX8580A 7.5A Very Low Dropout Positive Regulator I N T E G R AT E D P R O D U C T S Power Ma na ge men t P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing

LX8580A

Abstract: LX8580A-00CDD LX8580A-00CDDT LX8580A-00CDF LX8580A-00CP LX8584 K 927
Contextual Info: LX8580A I N T E G R A T E D 7.5A Very Low Dropout Positive Regulator P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode Fast Transient Response Remote Sensing 1mV Load Regulation

AYW marking code IC

Abstract: BF721T1G 306 marking code transistor
Contextual Info: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300

linfinity

Abstract: Linfinity Microelectronics LX8580A LX8580ACDD LX8580ACDF LX8580ACP LX8584
Contextual Info: A LINFINITY M I C R O S E M I LX8580A 7.5A Very Low Dropout Positive Regulator C O M P A N Y P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing ! 1mV Load Regulation

transistor 1564

Abstract: IN5502 transistor sd 965 40511 LSE 405 SD1564 transistor DF 50
Contextual Info: iiiT m r r v r n / r / / f f t / j ß f y / / P ro g re s s P o w ered b y T e c h no log y 140 Commerce Drive m i i i y u i i i ceryville, i y v i i i c , tPA m 18936-1013 io ^ ou- iu io Muontgom Tel: (215 631-9840 O f " \ -4 r A y | o U l 0 0 4 RF & MICROWAVE TRANSISTORS

Contextual Info: Part Number: Integra IBP3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar Technology − Ultra-high fT Part number IBP3134M25 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. Operating under the pulse

Contextual Info: Part Number: Integra IB2729M25 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M25 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. It is designed to serve

Contextual Info: Part Number: Integra IB2226M80 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2226M80 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating

Contextual Info: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems

DIODE BUZ 94

Contextual Info: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ60

Contextual Info: SIEMENS BUZ 60 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 60 Vds 400 V to 5.5 A Rosien 1Q Package Ordering Code TO-220 AB C67078-S1312-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b Tc = 36 °C