TRANSISTOR DF- RO Search Results

TRANSISTOR SMD MARKING CODE B7t

Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
Contextual Info: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated

fr diode

Abstract: DIODE JS.6 P-T0251
Contextual Info: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V

Contextual Info: h ~7 > V X £ / T ransistors 2 S D 1 7 6 2 2SD1762 x t f ^ df ' > 7 ; u 7 0 u - ^ N P N '> u = i> h 7 > y x ^ 1£J§>J$! :fr*i,lif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • W f^ & H /D im e n s io n s U n it: mm v*>JV;V'J| -r

2SD1898

Abstract: 100MHZ
Contextual Info: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B

AYW marking code IC

Abstract: BF721T1G 306 marking code transistor
Contextual Info: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300

linfinity

Abstract: Linfinity Microelectronics LX8580A LX8580ACDD LX8580ACDF LX8580ACP LX8584
Contextual Info: A LINFINITY M I C R O S E M I LX8580A 7.5A Very Low Dropout Positive Regulator C O M P A N Y P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing ! 1mV Load Regulation

transistor PNP A124

Abstract: CTC 880 transistor ctc 880 transistor pins
Contextual Info: For:mbh Printed on:Tue, Jul 9, 1996 10:59:01 Document:SL6619 Last saved on:Mon, Jul 8, 1996 10:36:04 JULY 1996 PRELIMINARY INFORMATION D.S. 3853 3.5 SL6619 DIRECT CONVERSION FSK DATA RECEIVER Supersedes the July 1995 Edition D.S. 3853 – 2.3 The SL6619 is an advanced Direct Conversion FSK Data

transistor PNP A124

Abstract: CTC 880 3-PIN TRANSISTOR CTC 880 transistor 3 pin CTC 880 transistor
Contextual Info: SEPTEMBER 1996 PRELIMINARY INFORMATION D.S. 4410 1.5 SL6679 DIRECT CONVERSION FSK DATA RECEIVER The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates all functions to convert a binary FSK modulated RF signal into

IB0810M12

Abstract: transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M
Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

tegra 2

Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
Contextual Info: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

Contextual Info: • JUNE 1990 ]P]LK SSEY SEM ICONDUCTORS ULA DF SERIES HIGH PERFORMANCE MIXED ANALOG/DIGITAL ARRAY FAMILY Supersedes May 1989 edition The n e w D F s e rie s o f a rra y s a re d e s ig n e d to p ro vid e cost effe c tiv e s in g le chip solutions to high s p e e d com b in e d

marking 5

Abstract: transistor Common Base configuration diode MARKING F3 transistor DF 50 4620 NT 101 PW 1.5 IB2729M90
Contextual Info: Part Number: Integra IB2729M90 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high f T The high power pulsed radar transistor part number IB2729M90 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C

Contextual Info: TELEDYNE COMPONENTS 2flE 0*il7fciQ2 OGObSS? a • T> -T ' 3 5 ' a s VERY LOW Ro n SWITCHING CM 697 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 .230 MAX. .185 ±.005- • LOW RDS - 150hms MAXIMUM • LOW Vp - 3 Volts MAXIMUM

transistor 4F LNA

Abstract: flo16 flo14 C2987 AN137 SL6619 2400bps DSA0017466 voltage controlled oscillator KHz IRF C20
Contextual Info: SL6619 Direct Conversion FSK Data Receiver Preliminary Information DS3853 ISSUE 4.1 April 1998 Ordering Information The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a

hall sensor cd-rom

Abstract: KA3020D VR10 VR11 VR12 VR13 CD-ROM spindle motor driver
Contextual Info: PRELIMINARY CD-ROM PRODUCTS KA3020D SPINDLE MOTOR DRIVER 28-SSOPH-375 The KA3020D is a monolithic integrated circuit, suitable for a 3-phase spindle motor drive of a CD system. FEATURES • 3-phase, full-wave, linear BLDC motor driver • Power save at stop mode

DS4410

Abstract: flo16 Varactor Diode RF AN137 flo14 SL6679
Contextual Info: SL6679 Direct Conversion FSK Data Receiver Preliminary Information Supersedes September 1996 version, DS4410 - 1.5 DS4410 - 2.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all

transistor 4F LNA

Abstract: flo14 flo16 Varactor Diode RF DS3853 AN137 SL6619
Contextual Info: SL6619 Direct Conversion FSK Data Receiver Preliminary Information Supersedes July 1996 version, DS3853 - 3.5 DS3853 - 4.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all

hall sensor cd-rom

Abstract: H314 KA3023D VR10 VR11 VR12 H110 H212 bldc servo servo motor controller diagram
Contextual Info: PRELIMINARY CD-ROM PRODUCTS KA3023D SPINDLE MOTOR DRIVER 28-SSOPH-375 The KA3023D is a monolithic integrated circuit, suitable for a 3-phase spindle motor drive of a CD system. FEATURES • 3-phase, full-wave, linear BLDC motor driver • Power save at stop mode

2N6568

Abstract: Crystalonics TELEDYNE CRYSTALONICS teledyne transistor
Contextual Info: ULTRA LOW Ro n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 4 5 6 , PG. 59 • LOW Rds - TA Ohms MAXIMUM • HIGH l DSS- 5 0 0 mA MINIMUM ELECTRICAL DATA A B S O LU TE M A X IM U M R A T IN G S PAR A M E TE R SYM BOL

Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

j167

Abstract: transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200
Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

m64084

Abstract: m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code
Contextual Info: MITSUBISHI ICs Cordless Telephone M64884FP Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION The M64884FP is a 2-sy stem 1-chip PLL f requency s y nthesizer IC designed of Analog cordless telephone f or North

fotofet

Abstract: ALG TRANSISTOR FF412
Contextual Info: FO TO FET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446, PG. 58 • • • • HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE LOW Ron ELECTRICAL DATA 4 270 MAX. A B S O LU TE M A X IM U M R A T IN G Drain to Source Voltage

smd transistor marking 7j

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
Contextual Info: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current