TRANSISTOR DATA SL 100 Search Results

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile

3010 MOS

Abstract: j177 equivalent transistor
Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J027

Contextual Info: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J464

Abstract: SL-5020 j196 Transistor J182
Contextual Info: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in

j142

Contextual Info: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-2522 The SL-2522 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

j497

Contextual Info: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

MOS 3020

Abstract: 3020 transistor sl 100 transistor
Contextual Info: Advance Data Sheet Product Description SL-3020 The SL-3020 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-12020 The SL-12020 is Stanford Microdevices’ high-linearity 120W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 120W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

j377

Contextual Info: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

sot172

Contextual Info: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE hTE bbS3T31 □DE'inb b4fl D Product specification Philips S em iconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

philips rf choke ferrite

Contextual Info: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

Contextual Info: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

BLU99

Abstract: BLU99/TDA3619/on4800
Contextual Info: i, One, tv TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f.

D008

Abstract: SL 100 NPN Transistor
Contextual Info: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •

Si 122D

Abstract: 122d transistor BLU11/Si 122D
Contextual Info: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.