TRANSISTOR DATA 3150 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor

sot23 marking u8

Abstract: PBSS8110T PBSS9110T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor

transistor s46

Abstract: SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X

transistor s46

Abstract: marking S46 sot89 PBSS4350X PBSS5350X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor

transistor s46

Abstract: marking code s46 PBSS4350x PBSS5350X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor

transistor s46

Abstract: marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X FEATURES QUICK REFERENCE DATA

free transistor equivalent book

Abstract: transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

Transistor J550

Abstract: j584 transistor
Contextual Info: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

BLS7G2933S-150

Abstract: a 3150 data sheet JESD625-A
Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

amplifier TRANSISTOR 12 GHZ

Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

BLS7G2933S-150

Abstract: radar amplifier s-band SOT922-1 JESD625-A
Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

TRANSISTOR SMD MARKING CODE 42

Abstract: TRANSISTOR SMD MARKING CODES PMEM4030NS PMEM4030PS
Contextual Info: PMEM4030PS PNP transistor/Schottky rectifier module Rev. 01 — 28 June 2005 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1

2SC6082

Abstract: Sanyo ic ENA0279
Contextual Info: 2SC6082 Ordering number : ENA0279 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit . Features

transistor c6082

Abstract: ENA0279B 2SC6082 C6082
Contextual Info: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features

transistor c6082

Contextual Info: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features

transistor c6082

Abstract: c6082 ENA0279A
Contextual Info: 2SC6082 Ordering number : ENA0279A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features