TRANSISTOR D2387 Search Results

TRANSISTOR D2387 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR D2387 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor D2387 Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558 Contextual Info: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2387 2SB1558 2-16C1A transistor D2387 D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558	PDF
D2387 Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387 Contextual Info: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387	PDF
D2387 Abstract: 2SB1558 2SD2387 transistor D2387 Contextual Info: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SD2387 2SB1558 2-16C1A D2387 2SB1558 2SD2387 transistor D2387	PDF
Contextual Info: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2387 2SB1558 2-16C1A	PDF