d1658
Abstract: transistor D1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SK3714
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3714 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3714 Isolated TO-220
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transistor D1658
Abstract: d1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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transistor D1658
Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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d1658
Abstract: transistor D1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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NP84N03KUF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N03KUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP84N03KUF is N-channel MOS Field Effect PART NUMBER PACKAGE NP84N03KUF TO-263 MP-25ZK Transistor designed for high current applications.
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transistor D1658
Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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transistor D1658
Abstract: 2SD1658 D1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SK3716
Abstract: 2SK3716-Z D1653
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3
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d1658
Abstract: 2SK3713 2SK3713-SK MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3713-SK TO-262 designed for high voltage and high speed switching
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2SK3716
Abstract: 2SK3716-Z D1653
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3
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2SK3716
Abstract: 2SK3716-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER 2SK3716 designed for high current switching applications. 2SK3716-Z PACKAGE TO-251 MP-3
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2SK3664
Abstract: SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent
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MARKING H1
Abstract: 2SJ648 SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent
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marking .H22
Abstract: 2SJ647 transistor NEC 2500
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm PACKAGE 2SJ647 SC-70 (SSP) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V ID(DC) m0.4
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D1659
Abstract: 2SJ648 SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent
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d1652
Abstract: 2SK3663
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent
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NP82N03KDF
Abstract: 41A28
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N03KDF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP82N03KDF is N-channel MOS Field Effect Transistors designed for high current switching application. PART NUMBER PACKAGE NP82N03KDF TO-263 MP-25ZK
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2SK3668
Abstract: 2SK3668-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high
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2SK3664
Abstract: SC-75
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3664 N チャネル MOS FET スイッチング用 2SK3664 は，2.5 V 電源系による直接駆動が可能なスイッ チング素子です。 外形図（単位：mm）
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marking .H22
Abstract: 2SJ647
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ647 P チャネル パワーMOS FET スイッチング用 外形図（単位: mm） 2SJ647 は，2.5 V 電源系による直接駆動が可能なスイッチング素子
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2SK3663
Contextual Info: データ・シート データ・シート MOS 形電界効果トランジスタ 形電界効果トランジスタ MOS Field Effect Transistor 2SK3663 N チャネル MOS FET スイッチング用 2SK3663 は，2.5 V 電源系による直接駆動が可能なス
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2SJ648
Abstract: SC-75
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ648 P チャネル パワーMOS FET スイッチング用 2SJ648 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）
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