TRANSISTOR D133 Search Results

d1308

Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.

transistor f 948

Abstract: TRANSISTOR bdp 948 sot 223 marking code 4c TRansistor A 950 siemens sot223 C4217
Contextual Info: SIEMENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low cotiector-emitter saturation voltage BDP 948 BDP 948 Q62702-D1336 1=B o CO BDP 950 BDP 950 Q62702-D1338 1= B 2=C CO

nec 2501

Abstract: 2SK3110 nec 2702
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

nec 2702

Abstract: nec 2501 2SK3108
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

Contextual Info: BSO 304SN Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 30 V flbsion

2SK3112

Abstract: 2SK3112-S 2SK3112-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3109

Abstract: 2SK3109-S 2SK3109-ZJ MP-25 1302 diode
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

BS0615N

Abstract: smd diode marking code ug SMD diode KL 615N smd diode marking FG smd code marking book smd diode Mu smd code BS0 26APulsed BS0615
Contextual Info: BSO 615N Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance ^DSion 0.15 ß • Avalanche rated Continuous drain current fc> 2.6 A

2SK3111

Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

d1333

Abstract: 2SK3113 2SK3113-Z 2SK3113 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113

2SK3113 equivalent

Abstract: 2SK3113 2SK3113-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113

2SK3114 equivalent

Abstract: 2sk3114 2SK3114 APPLICATION
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3112-ZJ

Abstract: 2SK3112 2SK3112-S MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,

k3113

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 3113 is N-channel DMOS FET device that features a ORDERING INFORMATION Part Number low gate charge and excellent switching characteristics, and

Contextual Info: BSO 302SN Infineon t«chnolog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ^S on • Avalanche rated Continuous drain current

2SK3112

Abstract: 2SK3112-S 2SK3112-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2S K 3112 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n

Contextual Info: BSO 307N I nf ine on technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage Vqs • Enhancement mode Drain-Source on-state resistance ffos on • Avalanche rated Continuous drain current b • Dual N channel

PW610

Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Contextual Info: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,

smd transistor 43t

Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
Contextual Info: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018

kd smd transistor

Contextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated