TRANSISTOR D131 Search Results

D1316

Abstract: 2SA1744
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is

2SD2165

Abstract: NEC marking b
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and

2SD2165

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and

2SD2165

Abstract: nec transistor Transistor NEC 30
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA

d1310

Abstract: 2SK3061 A2087
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3061 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching applications.

2SK3061

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching application.

2SK3062

Abstract: 2SK3062-S 2SK3062-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance

2SK3062

Abstract: 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance

PA1910

Abstract: PA1910TE SC-95
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent

PA1910

Abstract: PA1910TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent

2SB1097

Abstract: 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR
Contextual Info: '$7$ 6+ 7 SILICON POWER TRANSISTOR 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm • Mold package that does not require an insulating board or insulation bushing • Large current capacity in small dimension: IC(DC) = 7 A

d1308

Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

2SK2414

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2414-Z SWITCHING N-CHANNEL POWER MOS FET <R> PACKAGE DIMENSIONS Unit: mm The 2SK2414 is N-Channel MOS Field Effect Transistor designed 1.5 −0.1 5.0 ±0.2 1 2 5.5 ±0.2 • Low On-Resistance 3 1.1 ±0.2 • Low Ciss: Ciss = 860 pF TYP.

NEC 2505

Abstract: 2SK2372 2SK2371 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2371, 2372 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2371: RDS on = 0.25 Ω MAX. (VGS = 13 V, ID = 10 A)

TRANSISTOR F10 10N

Abstract: SS-220 10v 2SJ198 2SK1484
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ198 P-CHANNEL MOS FET FOR SWITCHING The 2SJ198 is a p-channel vertical type MOS FET switching

2SJ198

Abstract: 2SK1484
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ198 P-CHANNEL MOS FET FOR SWITCHING The 2SJ198 is a p-channel vertical type MOS FET switching OUTLINE DIMENSIONS Unit : mm device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low ON-state resistance is

2SK129

Abstract: PC1099CX PC1094 *c1094g 2SK1295 tea 1503 pc1094c1094g TEA-578 TEA-572 2SK1295 NEC
Contextual Info: データ・シート MOS形電界効果パワー トランジスタ MOS Field Effect Power Transistor 2SK1295 Ｎチャネル パワーMOS FET スイッチング用 工業用 外 形 図（単位：mm） 2SK1295は，Ｎチャネルエンハンスメント形パワーMOS

2SK3062

Abstract: 2SK3062-S 2SK3062-Z MP-25 MP-25Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3062 N チャネル パワーMOS FET スイッチング用 工業用 2SK3062 は N チャネル縦型パワーMOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途や

2SD2165

Abstract: *d2165
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2165 NPNエピタキシアル形シリコン・トランジスタ 低周波電力増幅，低速度スイッチング用 2SD2165は，hFEが特に高くなるように設計されたシングルのパ

2SK3061

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3061 N チャネル パワー MOS FET スイッチング用 工業用 2SK3061 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途

transistor d133

Abstract: Decoder BCD 7 seg ttl 7442 transistor 6B 7-seg ANODE COMMON 74155 74LS247 pin diagram of 74LS247 ttl 74191 75491
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL -T T L D130 54/74190, 74LS190 54/74191, 74LS191 D132 54/74155, 54LS/74LS155 54/74156, 54LS/74LS156 D131 9321, 93L21, 54/74S139, 54LS/74LS139 15 14 13 TTTT 12 11 10 9 Vcc = Pin 16 GND = Pin 8 Vcc = Pin 16 GND = Pin 8

2SD2165

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FX3U-48M

Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
Contextual Info: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)