TRANSISTOR D123 Search Results

2SK2981

Abstract: 2SK2981-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING Unit : mm FEATURES +0.2 6.5 ±0.2

2SK2982

Abstract: 2SK2982-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 5.0±0.2 • Low On-Resistance 2.3±0.2

C4106 transistor

Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
Contextual Info: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower

2SK2983

Abstract: 2SK2983-S 2SK2983-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A)

2SK2984

Abstract: 2SK2984-S 2SK2984-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A)

2SK2982

Abstract: 2SK2982-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A)

2SK2983

Abstract: 2SK2983-S 2SK2983-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A)

2SK2982

Abstract: 2SK2982-Z transistor C 2290
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)

2sk2984

Abstract: 2SK2984-S 2SK2984-ZJ MP-25 PT260
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2984 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 10 mΩ MAX. (VGS = 10 V, ID = 20 A)

2SK2981

Abstract: 2SK2981-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on 1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A)

Contextual Info: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance Rds oh i = 20 m£i (MAX.) (Vgs = 10 V, Id = 15 A)

Contextual Info: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance R ds oh i = 10 m£i (MAX.) (V gs = 10 V, Id = 20 A)

D217 OPTO

Abstract: opto transistor moc MOCD217 RS481A D217
Contextual Info: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic

PW610

Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Contextual Info: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

Contextual Info: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power

c4106

Abstract: d1061 C4106 transistor B1133 D1666 B824 transistor c4106 semiconductor transistor c3457 C4105 C4105 transistor
Contextual Info: T0-220MF Mini Fin P o w e r T r a n s i s t o r S e r i e s Feat ures Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower

2SK2981

Abstract: 2SK2981-Z Mos 6502
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2981 N チャネル パワーMOS FET スイッチング用 工業用 2SK2981 は，N チャネル縦型 MOS FET で，スイッチング特性が優れており，各種スイッチング電源用途に最適

2SK2982

Abstract: 2SK2982-Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2982 N チャネル パワーMOS FET スイッチング用 工業用 2SK2982 は， N チャネル縦型 MOS FET で，オン抵抗特性が優れており，ノートブック PC のパワー・マネージメ

2SK2983

Abstract: 2SK2983-S MP-25 MP-25Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2983 N チャネル パワーMOS FET スイッチング用 工業用 2SK2983 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。

ITE 8502

Abstract: 2SK2984 2SK2984-S MP-25 MP-25Z 2SK29
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2984 N チャネル パワーMOS FET スイッチング用 工業用 2SK2984 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。

TRANSISTOR D123

Abstract: D123BP in60 D123 D123AL D123AP G122
Contextual Info: designed for . . . B Siliconix D123 Monolithic 6-Channel FET Switch Drivers BENIEFITS llnterfacing Low Level Signals to IFET Switches such as G I I 5 and G122 Series Multi-Channel FET Switches • Reduces System C om ponent Requirements o Six Interface C ircuits on One Chip

dupline 128

Abstract: diode 2b 0536 equivalent components of diode 1n4002 BOX MODULAR ENCLOSURES IP55 D12362
Contextual Info: Issued November 1991 D12362 Dupline2-wire transmission system RS Stocknumbers 629-190, 629-279 A multiplexing transmission system, capable of sending and receiving up to 128 independent signals to a distance of 10km, simultaneously and in any direction, along two wires. The system is used for